bsc014ne2lsi Infineon Technologies Corporation, bsc014ne2lsi Datasheet - Page 3

• Manufacturer Part Number: bsc014ne2lsi
• Description: N-channel Power Mosfet
• Manufacturer: Infineon Technologies Corporation

2
at
Table 2
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
3
Table 3
Parameter
Thermal resistance, junction - case
Device on PCB
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
connection. PCB is vertical in still air
Final Data Sheet
T
j
= 25 °C, unless otherwise specified.
Maximum ratings
Maximum ratings
Thermal characteristics
Thermal characteristics
2)
3)
Symbol
R
R
Symbol
I
I
I
E
V
P
T
D
D,pulse
AS
thJC
thJA
j
AS
GS
tot
,T
stg
Min.
-
-
-
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
55/150/56
2
Typ.
-
-
-
Typ. Max.
-
-
-
-
-
-
-
-
-
-
-
-
Values
Values
2
2
100
100
100
94
33
400
50
50
20
74
2.5
150
(one layer, 70 µm thick) copper area for drain
(one layer, 70 µm thick) copper area for drain
Max.
1.7
20
50
OptiMOS™ Power-MOSFET
Unit
A
mJ
V
W
°C
Unit
K/W
Note / Test Condition
V
V
V
V
V
R
T
I
T
T
D
C
C
A
GS
GS
GS
GS
GS
thJA
=50 A,R
=25 °C
=25 °C
=25 °C, R
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V, T
=10 V, T
Note /
Test Condition
top
6 cm
=50 K/W
BSC014NE2LSI
2
GS
2.1, 2011-09-08
cooling area
=25 Ω
thJA
C
C
A
C
C
=25 °C
=100 °C
=25 °C,
1)
=25 °C
=100 °C
)
=50 K/W
1)
1)
)