bsc018n04lsg Infineon Technologies Corporation, bsc018n04lsg Datasheet - Page 6
![no-image](/images/no-image-200.jpg)
bsc018n04lsg
Manufacturer Part Number
bsc018n04lsg
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC018N04LSG.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSC018N04LSG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
2.5
1.5
0.5
10
10
10
10
10
DS
=f(T
3
2
1
0
5
4
3
2
1
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=50 A; V
10
98 %
20
GS
V
=10 V
T
typ
DS
j
60
20
[°C]
Coss
Ciss
[V]
Crss
100
30
140
180
page 6
40
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
j
GS
-20
150 °C
=V
0.5
DS
20
; I
D
=85 µA
V
T
SD
j
1.0
60
[°C]
25 °C
[V]
BSC018N04LS G
25 °C, 98%
100
1.5
140
150 °C, 98%
2007-12-05
180
2.0