bsc037n025s Infineon Technologies Corporation, bsc037n025s Datasheet
bsc037n025s
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bsc037n025s Summary of contents
Page 1
... /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot C T =25 ° =45 K/W thJA stg page 1 BSC037N025S 3.7 m 100 A PG-TDSON-8 Value Unit 100 200 350 mJ 6 kV/µs ± 2.8 -55 ... 150 °C 55/150/56 2006-05-10 ...
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... GSS =4 =50 A DS( |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 BSC037N025S G Values Unit min. typ. max 1.8 K 1.2 1 0.1 1 µ 100 - 10 100 ...
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... V oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 BSC037N025S G Values Unit min. typ. max. - 2750 3660 pF - 1050 1400 - 130 195 - 6 ...
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... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µ 100 µ [V] DS page 4 BSC037N025S G _10 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 0 ...
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... Typ. forward transconductance g =f 125 100 ° [V] GS page 5 BSC037N025S =25 ° 3.2 V 3 [A] D =25 ° [ 4 100 75 2006-05-10 ...
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... Forward characteristics of reverse diode I =f parameter Crss [V] DS page 6 BSC037N025S 500 µA 50 µA - 140 T [° °C 150 °C, 98% 150 °C 25 °C, 98% 0 0.5 1 1.5 [ 190 2 2006-05-10 ...
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... AV 16 Gate charge waveforms s(th) Q g(th) 90 140 190 [°C] j page 7 BSC037N025S =25 A pulsed gate [nC] gate ate ...
Page 8
... Package Outline P-TDSON-8: Outline Footprint Dimensions in mm Rev. 0.94 P-TDSON-8 page 8 BSC037N025S G 2006-05-10 ...
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... Package Outline P-TDSON-8: Tape Dimensions in mm Rev. 0.94 page 9 BSC037N025S G 2006-05-10 ...
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... Rev. 0.94 ° page 10 BSC037N025S G 2006-05-10 ...