bsc047n08ns3g Infineon Technologies Corporation, bsc047n08ns3g Datasheet - Page 4

• Manufacturer Part Number: bsc047n08ns3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.4
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
150
125
100
10
10
10
10
10
75
50
25
DS
0
-1
3
2
1
0
C
10
); T
0
)
-1
C
p
=25 °C; D =0
25
limited by on-state
resistance
50
10
0
75
T
V
C
DS
[°C]
[V]
100
10
125
1
DC
10 ms
100 µs
150
1 µs
1 ms
10 µs
175
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.01
=f(t
120
100
0.1
80
60
40
20
10
C
0
1
); V
10
p
0
)
0
-6
0.02
0.5
0.1
single pulse
0.2
0.05
0.01
GS
≥10 V
25
10
p
0
/T
-5
50
10
0
-4
75
T
t
C
10
p
[°C]
0
[s]
-3
100
BSC047N08NS3 G
10
0
125
-2
10
150
0
-1
2008-10-16
175
10
1
0