bsc046n02ksg Infineon Technologies Corporation, bsc046n02ksg Datasheet - Page 7

• Manufacturer Part Number: bsc046n02ksg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
24
22
20
18
16
AV
2
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
=25 Ω
-20
D
=1 mA
10
20
1
t
T
AV
j
[°C]
[µs]
60
125 °C
10
100 °C
2
100
25 °C
140
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
V
5
4
3
2
1
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=30 A pulsed
g s
10
4 V
Q
Q
gate
g
Q
sw
[nC]
10 V
Q
g d
BSC046N02KS G
20
16 V
Q
g ate
2007-10-23
30