bsc084p03ns3eg Infineon Technologies Corporation, bsc084p03ns3eg Datasheet - Page 2

• Manufacturer Part Number: bsc084p03ns3eg
• Description: Optimostm P3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.1
2)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance,
junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
6 cm
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=-50 A
DS
=V
=-30 V, V
=-30 V, V
=0 V, I
=-25 V, V
=-6 V, I
=-10 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
D
=-250µA
=-110 µA
=-30 A
D
DS(on)max
GS
GS
DS
=-50 A
=0 V,
=0 V,
=0 V
2)
,
min.
-3.0
-30
33
-
-
-
-
-
-
-
-
Values
typ.
-2.5
8.4
6.1
2.2
BSC084P03NS3E G
66
-
-
-
-
-
-
max.
-100
14.0
-2.0
1.8
-10
8.4
50
-1
-
-
-
Unit
K/W
V
µA
µA
mΩ
Ω
S
2009-11-16