fds6990asnl Fairchild Semiconductor, fds6990asnl Datasheet
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fds6990asnl
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fds6990asnl Summary of contents
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... JA R Thermal Resistance, Junction-to-Case θ JC Package Marking and Ordering Information Device Marking FDS6990AS FDS6990AS FDS6990AS_NL (Note 4) ©2005 Fairchild Semiconductor Corporation FDS6990AS Rev. A ® General Description = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFET GS = 4.5 V and two Schottky diodes in synchronous DC:DC power sup- GS plies ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS ∆ BV Breakdown Voltage Temperature DSS ∆ T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate–Body Leakage GSS On Characteristics (Note 2) V Gate Threshold Voltage ...
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Notes the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. θ guaranteed by design while R is determined ...
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Typical Characteristics 10V 3.5V GS 4. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 10V GS 1.4 1.2 1 0.8 ...
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Typical Characteristics 10 I =7. 10V GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON 10s ...
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Typical Characteristics SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in paral- lel with PowerTrench MOSFET. This diode exhibits similar char- acteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows ...
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Typical Characteristics vary t to obtain P required peak I AS Figure 15. Unclamped Inductive Load Test Circuit Drain Current Same type as DUT + 50k 10V 10 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ ...