fds6975-nf073 Fairchild Semiconductor, fds6975-nf073 Datasheet

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fds6975-nf073

Manufacturer Part Number
fds6975-nf073
Description
Fds6975 Dual P-channel, Logic Level, Powertrench Tm Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
© 1999 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
Absolute Maximum Ratings
These P-Channel
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
J
FDS6975
General Description
DSS
GSS
D
Dual P-Channel, Logic Level, PowerTrench
,T
JA
JC
STG
SOT-23
D1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
SO-8
D1
D2
Logic
SuperSOT
D2
- Pulsed
pin 1
Level
TM
S1
-6
G1
T
MOSFETs are
A
S2
= 25
SuperSOT
G2
o
C unless otherwise noted
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1a)
(Note 1)
(Note 1a)
TM
-8
Features
TM
SO-8
-6 A, -30 V. R
Low gate charge (14.5nC typical).
High performance trench technology for extremely low
R
High power and current handling capability.
DS(ON)
MOSFET
.
5
6
7
8
R
DS(ON)
DS(ON)
-55 to 150
Ratings
±20
-30
-20
1.6
0.9
78
40
SOT-223
-6
2
1
= 0.032
= 0.045
@ V
@ V
GS
GS
February 1999
= -10 V,
= -4.5 V.
3
1
4
2
SOIC-16
FDS6975 Rev.C
Units
°C/W
°C/W
°C
W
V
V
A

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fds6975-nf073 Summary of contents

Page 1

... unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) February 1999 = 0.032 @ V = -10 V, DS(ON 0.045 @ V = -4.5 V. DS(ON SOIC-16 SOT-223 Ratings -30 ±20 -6 -20 2 1.6 1 0.9 -55 to 150 78 40 Units °C °C/W °C/W FDS6975 Rev.C ...

Page 2

... J 0.034 0.045 -20 16 1540 400 170 14 -1.3 -0.73 -1 135 C 0.003 in pad of 2oz copper. FDS6975 Rev.C Units V o mV/ C µA µ mV ...

Page 3

... Dain Current and Gate Voltage - 125° 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125° 25° C -55° C 0.3 0.6 0.9 1 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDS6975 Rev 1.5 ...

Page 4

... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135°C 25°C A 0.1 0 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 300 20 30 300 FDS6975 Rev.C ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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