fds6b690s Fairchild Semiconductor, fds6b690s Datasheet - Page 2

• Manufacturer Part Number: fds6b690s
• Manufacturer: Fairchild Semiconductor

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
DSS
GSSF
GSSR
D(on)
S
the drain pins. R
d(on)
r
d(off)
f
rr
FS
BV
V
DS(on)
iss
oss
rss
GS(th)
g
gs
gd
SD
rr
JA
DSS
GS(th)
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
J
J
DSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
a) 50°/W when
mounted on a 1in
pad of 2 oz copper
Parameter
(Note 2)
2
(Note 2)
CA
is determined by the user's board design.
T
A
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
I
d
D
D
F
b) 105°/W when
iF
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DS
GS
DS
GS
GS
= 10A
= 1 mA, Referenced to 25 C
= 1 mA, Referenced to 25 C
/d
mounted on a .04 in
pad of 2 oz copper
=10 V, I
= 24 V,
= V
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 0 V, I
= 20 V,
= –20 V
= 10 V,
= 4.5 V,
= 10 V,
= 10 V,
= 5 V
= 0 V, I
t
= 300 A/µs
Test Conditions
G S
, I
D
D
D
= 1 mA
= 1 mA
=10 A, T
S
= 3.5 A
V
V
V
I
I
V
I
GS
DS
D
D
D
V
I
I
R
DS
D
D
2
= 10 A
= 8.5 A
GS
GEN
= 10 A,
DS
= 10 A
= 1 A,
= 0 V
= 0 V
= 0 V
= 5 V
= 0 V,
J
=125 C
= 6
(Note 2)
(Note 3)
Min
30
50
1
c) 125°/W when mounted on a
minimum pad.
1233
Typ
12.5
344
106
2.4
0.5
23
13
20
19
26
25
11
11
17
-6
8
5
5
4
Max Units
–100
100
3.5
0.7
16
24
26
16
10
40
20
18
1
3
FDS6680S Rev B (W)
mV/ C
mV/ C
m
mA
nA
nA
nC
nC
nC
nS
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V