bss123l ON Semiconductor, bss123l Datasheet - Page 2

• Manufacturer Part Number: bss123l
• Description: Power Mosfet 170 Ma, 100 V N-channel Sot-23
• Manufacturer: ON Semiconductor

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
REVERSE DIODE
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage
Static Drain−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Turn−Off Delay Time
Diode Forward On−Voltage
BSS123LT1
BSS123LT1G
BSS123LT3
BSS123LT3G
(V
(V
(V
(V
(V
(V
(V
(V
(V
(I
D
GS
GS
GS
DS
GS
DS
DS
DS
DS
= 0.34 Adc, V
= 0, I
= 0, V
= 20 Vdc, V
= V
= 10 Vdc, I
= 25 Vdc, I
= 25 Vdc, V
= 25 Vdc, V
= 25 Vdc, V
GS
D
DS
, I
= 250 mAdc)
D
= 100 Vdc)
= 1.0 mAdc)
D
D
GS
DS
GS
GS
GS
= 100 mAdc)
= 100 mAdc)
= 0 Vdc)
= 0)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
Device
(Note 4)
T
T
J
J
= 25 C
= 125 C
Characteristic
(4)
(T
A
= 25 C unless otherwise noted)
(V
(V
V
GS
CC
CC
= 10 Vdc, R
= 30 Vdc, I
30 Vdc, I
http://onsemi.com
BSS123LT1
C
C
GS
= 0.28 Adc,
= 50 W)
0.28 Adc,
2
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
SOT−23
V
Symbol
V
r
(BR)DSS
DS(on)
t
t
I
C
I
GS(th)
C
C
V
d(on)
d(off)
DSS
GSS
g
oss
rss
SD
iss
fs
10,000 Tape & Reel
10,000 Tape & Reel
Min
100
3,000 Tape & Reel
3,000 Tape & Reel
0.8
80
−
−
−
−
−
−
−
−
−
−
Shipping
Typ
5.0
9.0
4.0
20
20
40
−
−
−
−
−
−
−
†
Max
2.8
6.0
1.3
15
60
50
−
−
−
−
−
−
−
mmhos
mAdc
nAdc
Unit
Vdc
Vdc
pF
pF
pF
ns
ns
W
V