zxmhc10a07t8 Zetex Semiconductors plc., zxmhc10a07t8 Datasheet - Page 5

• Manufacturer Part Number: zxmhc10a07t8
• Description: Complementary 100v Enhancement Mode Mosfet H-bridge
• Manufacturer: Zetex Semiconductors plc.

ISSUE 2 - JUNE 2005
P-Channel
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
300 s; duty cycle
5
MIN.
-100
-2.0
-0.85
TYP.
141
13.1
10.8
1.2
3.3
1.6
2.1
5.9
1.6
3.5
0.6
1.6
29
31
2%.
MAX. UNIT CONDITIONS
-0.95
-1.0
-4.0
100
1.45
1
ZXMHC10A07T8
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= -250 A, V
= -250 A, V
= -0.6A
= -0.6A
=25°C, I
=25°C, I
S E M I C O N D U C T O R S
= -100V, V
= -15V, I
= -50V, V
= -50V, V
= -50V, V
=±20V, V
= -10V, I
= -6V, I
= -50V, I
=0V
6.0 , V
S
S
= -0.75A,
= -0.9A,
D
D
D
D
= -0.5A
GS
DS
GS
GS
GS
= -0.6A
= - 0.6A
= -1A
GS
DS
GS
= -10V
=0V
=0V
= -5V
= -10V
=V
=0V
=0V
GS