si7462dp-t1 Vishay, si7462dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7462dp-t1
• Description: N-channel 200-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 72136
S-52554-Rev. B, 19-Dec-05
0.20
0.16
0.12
0.08
0.04
0.00
20
10
10
1
8
6
4
2
0
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 4.1 A
0.2
On-Resistance vs. Drain Current
2
= 100 V
V
4
SD
T
Q
J
g
- Source-to-Drain Voltage (V)
= 150 °C
0.4
I
D
- Total Gate Charge (nC)
4
Gate Charge
- Drain Current (A)
8
0.6
6
V
GS
12
= 6.0 V
0.8
8
T
V
J
GS
= 25 °C
16
1.0
= 10 V
10
1.2
12
20
1600
1400
1200
1000
0.20
0.16
0.12
0.08
0.04
0.00
2.5
2.0
1.5
1.0
0.5
0.0
800
600
400
200
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
10
= 4.1 A
= 10 V
C
2
rss
T
0
V
V
20
J
DS
GS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
30
Capacitance
4
50
C
40
Vishay Siliconix
C
oss
iss
I
75
D
6
50
= 4.1 A
Si7462DP
100
www.vishay.com
60
8
125
70
150
10
80
3