si7464dp-t1 Vishay, si7464dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7464dp-t1
• Description: N-channel 200-v D-s Fast Switching Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 72052
S-52554-Rev. B, 19-Dec-05
0.1
0.4
0.3
0.2
0.1
0.0
10
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
= 2.8 A
0.2
= 100 V
V
SD
2
3
Q
T
g
J
- Source-to-Drain Voltage (V)
I
= 150 °C
D
- Total Gate Charge (nC)
V
Gate Charge
- Drain Current (A)
0.4
GS
= 6 V
4
6
0.6
V
GS
6
9
T
= 10 V
0.8
J
= 25 °C
New Product
1.0
12
8
800
600
400
200
2.5
2.0
1.5
1.0
0.5
0.0
0.5
0.4
0.3
0.2
0.1
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
= 2.8 A
C
V
V
rss
= 10 V
2
GS
DS
T
20
J
0
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
25
Capacitance
oss
4
C
iss
50
Vishay Siliconix
40
6
75
I
D
Si7464DP
= 2.8 A
www.vishay.com
100
60
8
125
150
10
80
3