si7943dp-t1-e3 Vishay, si7943dp-t1-e3 Datasheet - Page 3

• Manufacturer Part Number: si7943dp-t1-e3
• Description: Dual P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 71629
S-52555-Rev. C, 19-Dec-05
0.075
0.060
0.045
0.030
0.015
0.000
30
10
10
1
8
6
4
2
0
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
V
DS
GS
= 9.4 A
0.2
On-Resistance vs. Drain Current
10
= 15 V
= 2.5 V
V
6
SD
Q
g
– Source-to-Drain Voltage (V)
0.4
I
D
20
– Total Gate Charge (nC)
Gate Charge
T
– Drain Current (A)
J
12
= 150 °C
0.6
30
18
0.8
40
V
V
GS
GS
T
J
= 4.5 V
= 10 V
24
= 25 °C
1.0
50
New Product
1.2
30
60
4500
3600
2700
1800
0.10
0.08
0.06
0.04
0.02
0.00
1.6
1.4
1.2
1.0
0.8
0.6
900
– 50 – 25
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
rss
D
GS
= 9.4 A
= 10 V
2
6
T
0
V
V
J
C
DS
– Junction Temperature (°C)
GS
oss
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
50
C
Vishay Siliconix
= 9.4 A
iss
18
75
6
Si7943DP
100
www.vishay.com
24
8
125
150
10
30
3