si7980dp Vishay, si7980dp Datasheet - Page 5

• Manufacturer Part Number: si7980dp
• Description: Dual N-channel 20-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68391
S-83039-Rev. C, 29-Dec-08
0.001
0.01
- 0.2
- 0.4
- 0.6
- 0.8
100
0.1
0.4
0.2
0.0
10
1
0.0
- 50
- 25
Source-Drain Diode Forward Voltage
0.2
T
V
J
SD
0
= 150 °C
Threshold Voltage
- Source-to-DrainVoltage(V)
T
0.4
J
- Temperature (°C)
25
0.6
50
I
D
75
= 250 mA
0.01
100
0.1
0.8
10
1
0.1
T
100
Safe Operating Area, Junction-to-Ambient
J
* V
= 25 °C
Single Pulse
I
T
GS
1.0
D
A
= 5 mA
125
= 25 °C
Limited by R
> minimum V
V
DS
150
1.2
- Drain-to-Source Voltage (V)
1
DS(on)
GS
at which R
*
BVDSS
Limited
10
DS(on)
0.060
0.048
0.036
0.024
0.012
0.000
is specified
60
48
36
24
12
0
0
1 ms
10 ms
100 ms
1 s
10 s
DC
0 .
0
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100
2
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
Vishay Siliconix
6
Si7980DP
www.vishay.com
I
T
T
D
1
J
J
= 5 A
= 25 °C
= 125 °C
8
10
1
0
5