bsp19a ON Semiconductor, bsp19a Datasheet
bsp19a
Manufacturer Part Number
bsp19a
Description
Small Signal A/sw Npn Transistor
Manufacturer
ON Semiconductor
Datasheet
1.BSP19A.pdf
(4 pages)
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BSP19AT1
NPN Silicon Expitaxial
Transistor
as a general purpose amplifier and in switching applications. The
device is housed in the SOT‐223 package which is designed for
medium power surface mount applications.
Features
•
•
•
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR‐4 glass epoxy printed circuit board using minimum
© Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 7
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector‐Emitter Voltage (Open Base)
Collector‐Base Voltage (Open Emitter)
Emitter‐Base Voltage (Open Collector)
Collector Current (DC)
Total Power Dissipation @ T
(Note 1)
Derate above 25°C
Thermal Resistance, Junction- to- Ambient
Junction and Storage Temperature Range
This family of NPN Silicon Epitaxial transistors is designed for use
SOT‐223 Package Ensures Level Mounting, Resulting in Improved
Thermal Conduction, and Allows Visual Inspection of Soldered Joints
Eliminating the Possibility of Damage to the Die
High Voltage: V
The SOT‐223 Package can be Soldered Using Wave or Reflow
The Formed Leads Absorb Thermal Stress During Soldering,
PNP Complement is BSP16T1
Moisture Sensitivity Level (MSL): 1
ESD:
Pb-Free Package is Available
recommended footprint.
Human Body Model (HBM) = 4 KV
Machine Model (MM) = 400 V
Characteristic
Rating
(BR)CEO
(T
C
A
Preferred Device
= 25°C unless otherwise noted)
of 250 and 350 V
= 25°C
Symbol
Symbol
V
V
V
R
T
P
CEO
CBO
EBO
I
qJA
stg
C
D
- 65 to +150
Value
Max
350
400
100
156
5.0
0.8
6.4
1
mW/°C
mAdc
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
W
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
TRANSISTOR SURFACE MOUNT
BSP19AT1
BSP19AT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NPN SILICON HIGH VOLTAGE
Device
1
(Note: Microdot may be in either location)
CASE 318E
TO‐261AA
STYLE 1
2
A
Y
W
SP19A = Specific Device Code
G
ORDERING INFORMATION
SOT- 223 PACKAGE
3
BASE
http://onsemi.com
COLLECTOR 2,4
1
= Assembly Location
= Year
= Work Week
= Pb-Free Package
SOT-223
(Pb-Free)
SOT-223
Package
4
EMITTER 3
Base
Publication Order Number:
1
MARKING
DIAGRAM
1000 / Tape & Reel
1000 / Tape & Reel
Collector
SP19A G
Collector
AYW
Shipping
4
G
2
BSP19AT1/D
3
Emitter
†
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bsp19a Summary of contents
Page 1
... Base Emitter 2 Collector A = Assembly Location Y = Year W = Work Week SP19A = Specific Device Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION † Device Package Shipping SOT-223 1000 / Tape & Reel SOT-223 1000 / Tape & Reel (Pb-Free) Publication Order Number: BSP19AT1/D ...
Page 2
... Vdc 5.0 MHz Collector‐Emitter Saturation Voltage ( mAdc 4.0 mAdc Base‐Emitter Saturation Voltage ( mAdc 4.0 mAdc Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0% BSP19AT1 (T = 25°C unless otherwise noted) A http://onsemi.com 2 Symbol Min Max Unit V Vdc (BR)CEO 350 - I ...
Page 3
... I , COLLECTOR CURRENT (A) C Figure 3. Base Saturation Voltage 10000 T = 25° 5.0 MHz 1000 100 COLLECTOR CURRENT (mA) C Figure 5. Current Gain - Bandwidth Product BSP19AT1 1.2 IC/ 0.8 0.6 0.4 0.2 0 0.0001 0.1 1 Figure 2. Collector Saturation Voltage 1 0.8 0.6 = 125° ...
Page 4
... E q 0° 10° 0° PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR mm ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BSP19AT1/D MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° ...