sia921edj Vishay, sia921edj Datasheet

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sia921edj

Manufacturer Part Number
sia921edj
Description
Dual P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
sia921edj-T1-E3
0
Part Number:
sia921edj-T1-GE3
0
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 64734
S09-0317-Rev. A, 02-Mar-09
Ordering Information: SiA921EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 20
(V)
PowerPAK SC-70-6 Dual
2.05 mm
6
D
0.059 at V
0.098 at V
1
5
G
R
2
D
DS(on)
1
4
S
S
GS
GS
1
2
1
J
(Ω)
= - 4.5 V
= - 2.5 V
D
= 150 °C)
G
2
b, f
Dual P-Channel 20-V (D-S) MOSFET
1
2
2.05 mm
D
2
3
I
- 4.5
- 4.5
D
Part # code
(A)
a
a
d, e
A
= 25 °C, unless otherwise noted
Q
Marking Code
Steady State
4.9 nC
g
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
(Typ.)
t ≤ 5 s
D F X
X X X
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Lot Traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Thermally Enhanced PowerPAK
• Typical ESD Protection 400 V
• High Speed Switching
• Load Switch, PA Switch and Battery Switch for Portable
• DC/DC Converters
Symbol
Symbol
T
R
R
J
V
V
Definition
Package
- Small Footprint Area
- Low On-Resistance
Devices
I
P
, T
I
DM
I
thJA
thJC
DS
GS
D
S
D
stg
G
1
®
Power MOSFET
Typical
P-Channel MOSFET
12.5
52
- 55 to 150
- 4.5
- 3.7
- 1.6
1.9
1.2
- 4.5
- 4.5
- 4.5
Limit
± 12
- 20
- 15
260
7.8
S
D
5
a, b, c
1
b, c
b, c
1
b, c
b, c
a
a
a
Maximum
G
2
65
16
Vishay Siliconix
SiA921EDJ
®
P-Channel MOSFET
SC-70
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
S
D
2
2
1

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sia921edj Summary of contents

Page 1

... 2. Ordering Information: SiA921EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SiA921EDJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage Document Number: 64734 S09-0317-Rev. A, 02-Mar- °C (mA) GSS 2 1 2.0 2.5 3.0 1000 = 4 SiA921EDJ Vishay Siliconix - 150 ° GSS - °C GSS - - ...

Page 4

... SiA921EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 Total Gate Charge (nC) g Gate Charge 100 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0 Temperature (°C) ...

Page 5

... V > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiA921EDJ Vishay Siliconix 100 µ 100 100 is specified ...

Page 6

... SiA921EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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