dg648bh45 Dynex Semiconductor, dg648bh45 Datasheet - Page 8

• Manufacturer Part Number: dg648bh45
• Description: Gate Turn-off Thyristor
• Manufacturer: Dynex Semiconductor

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5000
4000
3000
2000
1000
Fig.11 Turn-on energy vs peak forward gate current
0
0
4000
3000
2000
1000
Peak forward gate current I
0
0
20
Conditions:
T
C
R
dI
dI
j
S
S
T
FG
= 125˚C, I
/dt = 300A/ s,
= 2.0 F,
= 10 ,
/dt = 30A/ s,
500
Conditions:
T
C
dI/dt = 300A/µs,
dI
40
j
S
FG
FGM
= 125˚C, I
= 2.0µF, R
/dt = 30A/µs
= 30A,
Fig.10 Turn-on energy vs on-state current
1000
FGM
T
= 2000A,
S
60
V
V
V
On-state current I
= 10 Ohms
- (A)
D
D
D
= 3000V
= 2000V
= 1000V
1500
80
Fig.12 Turn-on energy vs rate of rise of on-state current
T
- (A)
4000
3000
2000
1000
2000
Rate of rise of on-state current dI
0
0
Conditions:
I
T
C
R
I
dI
V
V
V
T
FGM
j
S
S
FG
D
D
D
= 2000A,
= 125˚C,
= 2.0 F
= 10 Ohms
= 3000V
= 2000V
= 1000V
/dt = 30A/ s
= 30A,
2500
100
3000
200
V
V
V
D
D
D
= 3000V
= 2000V
= 1000V
T
/dt - (A/ s)
300