dg646bh25 Dynex Semiconductor, dg646bh25 Datasheet - Page 3

• Manufacturer Part Number: dg646bh25
• Description: Gate Turn-off Gto - 2500v
• Manufacturer: Dynex Semiconductor

CHARACTERISTICS
Symbol
T
j
www.dynexsemi.com
Q
E
I
I
Q
I
E
= 125° C unless stated otherwise
V
V
I
RGM
GQM
RRM
I
t
t
DM
t
GT
t
OFF
GQT
t
gs
gq
TM
GT
ON
gf
GQ
d
r
SEMICONDUCTOR
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
Parameter
At 2000A peak, I
V
At V
V
V
V
V
I
I
I
V
Snubber capacitor C
di
T
FG
T
DRM
D
D
RGM
D
DM
GQ
= 2000A, dI
= 2000A,
= 24V, I
= 24V, I
= 1500V
= 30A, rise time < 1.0µs
/dt = 40A/µs
RRM
= 2500V,
= 2500V, V
= 16V, No gate/cathode resistor
Test Conditions
T
T
= 100A, T
= 100A, T
T
/dt = 300A/µs
G(ON)
RG
= 0V
S
= 7A dc
= 2.0µF,
j
j
= 25° C
= 25° C
Min
-
-
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13200
Max.
1188
4000
6600
17.0
19.0
1.0
3.0
100
650
2.6
1.2
3.0
2.0
50
50
Units
DG646BH25
mA
mA
mA
mJ
mJ
µC
µC
µs
µs
µs
µs
µs
V
A
V
A
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