upg2317t5j Renesas Electronics Corporation., upg2317t5j Datasheet

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upg2317t5j

Manufacturer Part Number
upg2317t5j
Description
Ingap Power Amplifier For Dual Band W-lan
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPG2317T5J.pdf (9 pages)
Document No. PG10718EJ01V0DS (1st edition)
Date Published May 2008 NS
Printed in Japan
DESCRIPTION
high-density surface mounting.
FEATURES
• Operating frequency
• Supply voltage
• Control voltage
• Circuit current
• Power gain
• Error vector magnitude
• High-density surface mounting : 12-pin plastic TQFN package (2.5 × 2.5 × 0.37 mm)
APPLICATION
• Power Amplifier for 802.11a/b/g, etc.
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
μ
PG2317T5J-E2
Remark To order evaluation samples, contact your nearby sales office.
The
This device realizes high efficiency, high gain and high output power by using InGaP HBT and shut-down function.
This device is housed in a 12-pin plastic TQFN (Thin Quad Flat Non-leaded) package. And this package is able to
Part Number
μ
PG2317T5J is a GaAs HBT MMIC power amplifier for Dual (2.4 GHz and 5.8 GHz) band wireless LAN.
Part number for sample order:
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
InGap POWER AMPLIFIER FOR DUAL BAND W-LAN
μ
PG2317T5J-E2-A
Order Number
PRELIMINARY DATA SHEET
: f
: f
: V
: V
: I
: I
: G
: G
: EVM
: EVM
opt
opt
CC (L)
CC (H)
CC (H)
enable (H)
P (L)
P (H)
12-pin plastic TQFN
(Pb-Free)
= 2 400 to 2 500 MHz (L-band)
= 4 900 to 5 850 MHz (H-band)
(L)
(H)
= 125 mA TYP. @ P
= 29 dB TYP. @ P
= 150 mA TYP. @ P
= 27 dB TYP. @ P
,
(L)
μ
= 3.0% TYP. @ P
= 4.0% TYP. @ P
,
Package
PG2317T5J
(L)
= 3.0 to 3.6 V (3.3 V TYP.)
= 0 to 2.9 V (2.8 V TYP.)
out
out
Marking
out
out
out
2317
out
= +18 dBm, 11g OFDM 54 Mbps signal
= +18 dBm, 11a OFDM 54 Mbps signal
GaAs HBT INTEGRATED CIRCUIT
= +18 dBm, 11g OFDM 54 Mbps signal
= +18 dBm, 11a OFDM 54 Mbps signal
= +18 dBm, 11g OFDM 54 Mbps signal
= +18 dBm, 11a OFDM 54 Mbps signal
• Embossed tape 8 mm wide
• Pin 10, 11, 12 face the perforation side of the tape
• Qty 3 kpcs/reel
μ
PG2317T5J
Supplying Form
2008

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upg2317t5j Summary of contents

Page 1

PRELIMINARY DATA SHEET InGap POWER AMPLIFIER FOR DUAL BAND W-LAN DESCRIPTION μ The PG2317T5J is a GaAs HBT MMIC power amplifier for Dual (2.4 GHz and 5.8 GHz) band wireless LAN. This device realizes high efficiency, high gain and high ...

Page 2

PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) (Top View ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol Supply Voltage V CC (H) Control Voltage ...

Page 3

ELECTRICAL CHARACTERISTICS +25° 3 (L) enable (L) RF signal: 11g OFDM 54 Mbps at L-band, unless otherwise specified) Parameter Symbol Frequency Range f opt Circuit Current I CC (L) Power Gain ...

Page 4

EVALUATION CIRCUIT V enable (L) 100 ( ( enable (H) μ 0 (H) The application circuits and their parameters are for reference only and are not ...

Page 5

MOUNTING PAD LAYOUT DIMENSIONS 12-PIN PLASTIC TQFN (UNIT: mm) Remark The mounting pad layout in this document is for reference only. 1.4 1.4 0.97 0.97 0.72 0.72 – 0.5 12 0.25 Preliminary Data Sheet PG10718EJ01V0DS μ PG2317T5J 5 ...

Page 6

PACKAGE DIMENSIONS 12-PIN PLASTIC TQFN (UNIT: mm) 0.23±0.05 6 2.5±0.05 (Bottom View) 0.15 0.50 1.44 Preliminary Data Sheet PG10718EJ01V0DS μ PG2317T5J 0.4 MAX. ...

Page 7

RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Peak temperature (package surface temperature) Time at peak ...

Page 8

The information in this document is current as of May, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

Page 9

This product uses gallium arsenide (GaAs). Caution GaAs Products GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If ...

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