nte2911 NTE Electronics, Inc., nte2911 Datasheet - Page 2

• Manufacturer Part Number: nte2911
• Description: Mosfet N?channel, Enhancement Mode High Speed Switch To220sis Type Package
• Manufacturer: NTE Electronics, Inc.

Electrical Characteristics: (T
Source−Drain Ratings and Characteristics: (T
Note 2. Ensure that the channel temperature does not exceed +150°C.
Gate Leakage Current
Gate−to−Source Breakdown Voltage
Drain Cut−Off Current
Drain−to−Source Breakdown Voltage
Gate Threshold Voltage
Drain−to−Source On−Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Time
Rise Time
Turn−Off Time
Fall Time
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Continuous Drain Reverse Current
Pulse Drain Reverse Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
A
= +25°C unless otherwise specified)
Symbol
G
V
V
Symbol
R
V
V
I
(BR)GSS
(BR)DSS
I
DRP
Q
I
I
C
C
DR
DSF
DS(on)
C
Q
t
GS(th)
|y
Q
GSS
DSS
Q
rr
t
t
on
off
rr
oss
t
t
rss
iss
fs
gs
gd
r
f
g
|
Note 2
Note 2
I
I
dI
DR
DR
V
V
V
V
V
V
V
V
V
V
I
DR
D
GS
DS
DS
GS
DS
GS
DS
GS
DD
GS
= 12A, V
= 12A, V
= 12A, V
/dt = 100A/μs
= ±25V, V
= 0V, I
= 500V, V
= 0V, I
= 10V, I
= 10V, I
= 10V, I
= 0V, V
= 200V, I
= 10V, Duty ≤ 1%, t
A
Test Conditions
= +25°C unless otherwise specified)
D
S
Test Conditions
GS
GS
G
D
DD
DS
D
D
D
= 10mA
= ±10μA
D
= 0V
= 0V,
= 1mA
= 6A
= 6A
DS
GS
= 400V, V
= 25V, f = 1MHz
= 6A, R
= 0V
= 0V
L
w
GS
= 33Ω,
= 10μs
= 10V
Min
Min
±30
500
2.0
3.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1200
1500
Typ
Typ
180
170
0.4
8.5
16
15
50
22
36
42
23
19
−
−
−
−
−
−
−
−
Max
Max
−1.7
0.52
±10
100
4.0
12
48
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
μC
μA
μA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
S
A
A
V