ne68839r-t1 Renesas Electronics Corporation., ne68839r-t1 Datasheet - Page 3

• Manufacturer Part Number: ne68839r-t1
• Description: Surface Mount Npn Silicon High Frequency Transistor
• Manufacturer: Renesas Electronics Corporation.

TYPICAL PERFORMANCE CURVES
INSERTION GAIN vs. COLLECTOR CURRENT
0.05
0.02
0.01
100
0.5
100
0.2
0.1
200
50
20
10
5
2
4
0
1
8
6
2
0
0.1 0.2
1
0
V
V
CE
f = 2 GHz
CE
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
= 1 V
= 1 V
2
COLLECTOR CURRENT vs.
D.C. CURRENT GAIN vs.
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
0.5
5
1
NE68833
2
10
0.5
5
20
C
10
C
V
V
CE
CE
(mA)
(mA)
20
= 3 V
= 1 V
BE
50
(V)
50
100
100
1
(TA = 25°C)
0.5
1.0
0.1
NOISE FIGURE vs. COLLECTOR CURRENT
10
8
6
2
5
4
0
4
2
3
0
1
1
1
1
f = 2 GHz
COLLECTOR TO BASE VOLTAGE
f = 2 GHz
FEED-BACK CAPACITANCE vs.
Collector to Base Voltage, V
GAIN BANDWIDTH PRODUCT
2
vs. COLLECTOR CURRENT
2
Collector Current, I
Collector Current, I
5
5
NE68833
NE68839
NE68830
10
10
5
V
CE
20
20
C
C
= 3 V
V
V
(mA)
V
(mA)
CE
CE
CE
10
= 3 V
CB
= 1 V
f = 1 MHz
= 1 V
50
50
(V)
100
100
20