auirfr3806trr International Rectifier Corp., auirfr3806trr Datasheet - Page 2

• Manufacturer Part Number: auirfr3806trr
• Description: Hexfet power Mosfet
• Manufacturer: International Rectifier Corp.

Static Electrical Characteristics @ T
V
ΔV
R
V
gfs
R
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Diode Characteristics
Notes:

‚
ƒ
„
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G(int)
iss
oss
rss
oss
oss
g
gs
gd
sync
rr
Symbol
Symbol
Symbol
(BR)DSS
Repetitive rating; pulse width limited by max. junction
Limited by T
Pulse width ≤ 400μs; duty cycle ≤ 2%.
temperature.
use above this value.
I
2
R
SD
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
G
≤ 25A, di/dt ≤ 1580A/μs, V
= 25Ω, I
/ΔT
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25A, V
, starting T
Parameter
GS
=10V. Part not recommended for
J
= 25°C, L = 0.23mH
Ù
DD
≤ V
Parameter
Parameter
(BR)DSS
, T
J
g
J
= 25°C (unless otherwise specified)
- Q
≤ 175°C.
J
gd
= 25°C (unless otherwise specified)
)
g
Ã
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
…
†
‡
ˆ
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.075 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
–––
60
41
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
R
C
as C
C
mended footprint and soldering techniques refer to application note #AN-994.
oss
θ
oss
oss
is measured at T
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
1150
12.6
0.79
28.3
–––
–––
–––
–––
–––
–––
–––
130
190
230
–––
–––
–––
5.0
6.3
6.3
1.4
22
40
49
47
67
22
26
17
24
while V
DS
-100
15.8
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
–––
4.0
1.3
20
30
43
33
39
26
36
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
J
V/°C
approximately 90°C.
mΩ
nC
nC
μA
nA
pF
ns
ns
V
V
S
Ω
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 25A
= 25A, V
= 25A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 20Ω
= 0V, I
= 10V, I
= V
= 10V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 30V
= 10V
= 39V
= 10V
= 0V
= 50V
= 0V, V
= 0V, V
GS
, I
DSS
D
f
f
DS
S
D
DS
DS
D
D
= 250μA
DSS
GS
GS
= 25A, V
.
= 50μA
= 25A
=0V, V
= 25A
= 0V to 60V
= 0V to 60V
Conditions
Conditions
Conditions
= 0V
= 0V, T
.
V
I
di/dt = 100A/μs
F
R
= 25A
D
f
GS
= 51V,
GS
= 5mA
J
= 10V
= 125°C
= 0V
g
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™
G
f
f
S
D