auirls4030-7p International Rectifier Corp., auirls4030-7p Datasheet - Page 2

• Manufacturer Part Number: auirls4030-7p
• Description: Hexfetpower Mosfet
• Manufacturer: International Rectifier Corp.

Notes:

‚
ƒ
„
Static Electrical Characteristics @ T
V
ΔV
R
V
gfs
I
I
R
Dynamic Electrical Characteristics @ T
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G(int)
g
gs
gd
sync
iss
oss
rss
oss
oss
rr
above this value .
Repetitive rating; pulse width limited by max. junction
Limited by T
Pulse width ≤ 400μs; duty cycle ≤ 2%.
temperature.
I
2
R
(BR)DSS
SD
G
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
≤ 110A, di/dt ≤ 1520A/μs, V
= 25Ω, I
/ΔT
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 110A, V
, starting T
Parameter
GS
J
=10V. Part not recommended for use
= 25°C, L = 0.05mH
DD
™
≤ V
Parameter
Parameter
(BR)DSS
, T
J
g
J
= 25°C (unless otherwise specified)
- Q
≤ 175°C.
J
gd
= 25°C (unless otherwise specified)
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
…
†
‡
ˆ
‰
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
–––
–––
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 11490 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
mended footprint and soldering techniques refer to application note #AN-994.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
C
as C
C
oss
θJC
oss
θ
oss
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
1170
0.10
–––
–––
–––
–––
–––
–––
–––
160
110
680
300
760
–––
–––
–––
155
3.2
3.3
2.0
3.3
93
27
43
50
53
87
53
63
99
while V
DS
-100
–––
–––
–––
250
100
–––
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
190
750
–––
–––
–––
–––
–––
3.9
4.1
2.5
1.3
20
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
V/°C
mΩ
μA
nA
nC
nC
ns
pF
ns
Ω
V
V
S
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 110A
= 110A, V
= 110A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 2.7Ω
= 0V, I
= 10V, I
= 4.5V, I
= V
= 25V, I
= 100V, V
= 100V, V
= 16V
= -16V
= 50V
= 4.5V
= 65V
= 4.5V
= 0V
= 50V
= 0V, V
= 0V, V
GS
, I
DSS
D
f
f
D
S
DS
DS
D
D
DS
= 250μA
DSS
D
.
= 110A, V
= 250μA
= 110A
= 110A
GS
GS
= 94A
= 0V to 80V
= 0V to 80V
Conditions
Conditions
Conditions
=0V, V
.
= 0V
= 0V, T
V
I
di/dt = 100A/μs
F
R
= 110A
D
= 85V,
f
f
GS
= 5mA
GS
J
= 4.5V
= 125°C
= 0V
h
g
www.irf.com
G
™
f
f
S
D