fds8958a-nf073 Fairchild Semiconductor, fds8958a-nf073 Datasheet - Page 2

• Manufacturer Part Number: fds8958a-nf073
• Description: Fds8958a Dual N & P-channel Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

BV
∆BV
I
I
I
V
∆V
R
I
g
C
C
C
R
Electrical Characteristics
Symbol
Off Characteristics
DSS
GSSF
GSSR
On Characteristics
Dynamic Characteristics
D(on)
FS
∆T
GS(th)
∆T
DS(on)
iss
oss
rss
G
DSS
GS(th)
DSS
J
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward V
Gate-Body Leakage, Reverse V
Parameter
(Note 2)
V
V
I
I
V
V
V
V
V
V
V
V
V
V
Q1
V
Q2
V
D
D
V
V
V
I
I
V
V
D
D
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
GS
= 250 µA, Referenced to 25°C
= -250 µA, Referenced to 25°C
DS
GS
GS
DS
DS
GS
GS
= 250 µA, Referenced to 25°C
= -250 µA, Referenced to 25°C
= V
= V
= 5 V,
= -5 V,
= 15 V, V
= 10 V,
= 10 V, I
= 4.5 V,
= -10 V,
= -10 V, I
= -4.5 V,
= 10 V,
= -10 V,
= 15 mV,
= -15 V, V
= 0 V,
= 0 V,
= 24 V,
= -24 V,
= 20 V,
= -20 V,
GS
GS
T
Test Conditions
A
,
,
= 25°C unless otherwise noted
GS
D
D
GS
= 7 A, T
= -5 A, T
= 0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz
I
I
V
V
V
V
I
I
I
I
I
I
V
V
I
I
f = 1.0 MHz
D
D
D
D
D
D
D
D
D
D
GS
GS
DS
DS
DS
DS
= 250 µA
= -250 µA
= 250 µA
= -250 µA
= 7 A
= 6 A
= -5 A
= -4 A
= 7 A
=-5 A
= 0 V
= 0 V
= 0 V
= 0 V
= 5 V
= -5 V
J
= 125°C
J
= 125°C
Type Min Typ Max Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
All
All
-20
-30
20
-1
30
1
-1.7
-4.5
575
528
145
132
1.9
4.5
2.1
6.0
-23
19
27
24
42
57
65
25
10
65
70
25
-100
100
28
42
40
52
78
80
FDS8958A Rev F1 (W)
-3
-1
3
1
mV/°C
mV/°C
mΩ
pF
pF
pF
µA
nA
nA
Ω
V
A
S
V