2sd1251a Panasonic Corporation of North America, 2sd1251a Datasheet - Page 2

• Manufacturer Part Number: 2sd1251a
• Description: Silicon Npn Triple Diffusion Junction Type For Power Amplification
• Manufacturer: Panasonic Corporation of North America

2SB1251
2
0.01
0.01
100
0.1
0.1
50
40
30
20
10
10
10
0
1
0.01
1
1
0
Collector-emitter voltage V
I
I
(1)
(2)
(3)
CP
C
Ambient temperature T
Safe operation area
Collector current I
t=10ms
40
V
t=300ms
10
CE(sat)
P
0.1
C
(1)T
(2)With a 50×50×2mm
(3)Without heat sink
 T
80
Al heat sink
(P
Non repetitive pulse
T
C
 I
C
C
t=5ms
=Ta
=1.3W)
=25˚C
a
100
25˚C
C
C
120
T
a
C
( A )
1
I
T
=100˚C
C
CE
( °C )
C
/I
=25˚C
–25˚C
B
=5
( V )
1000
160
10
10
10
10
10
10
10
2.4
2.0
1.6
1.2
0.8
0.4
10
10
−1
−2
1
1
0.01
3
2
0
4
3
2
10
0
−4
Collector-emitter voltage V
–25˚C
T
25˚C
C
=100˚C
Collector current I
2
SJD00168CED
10
−3
0.1
I
h
4
C
FE
 V
 I
6
10
−2
CE
C
1
8
C
I
( A )
B
T
V
10
=35mA
30mA
25mA
20mA
CE
C
5mA
15mA
10mA
10
CE
=25˚C
−1
=3V
( V )
R
Time t (s)
10
12
th
 t
1
10
10
10
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
10
10
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
0
1
4
3
2
0.1
0
Collector-base voltage V
Base-emitter voltage V
T
C
0.4
=100˚C
10
2
C
0.8
I
1
25˚C
C
ob
 V
 V
–25˚C
1.2
10
3
BE
CB
1.6
10
(1)
(2)
I
f=1MHz
T
BE
E
CB
C
10
=0
V
=25˚C
2.0
CE
4
( V )
(V)
=3V
100
2.4