2sd1209k Renesas Electronics Corporation., 2sd1209k Datasheet - Page 2

• Manufacturer Part Number: 2sd1209k
• Description: Silicon Npn Epitaxial, Darlington
• Manufacturer: Renesas Electronics Corporation.

2SD1209(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Note:
2
1. Pulse test
Symbol
V
I
I
h
V
V
CEO
EBO
FE
(BR)CBO
CE(sat)
BE(sat)
Min
60
—
—
4000
—
—
Symbol
V
V
V
I
i
P
Tj
Tstg
Typ
—
—
—
—
—
—
C(peak)
C
CBO
CEO
EBO
C
Max
—
100
100
—
1.5
2.0
Unit
V
V
V
A
A
Ratings
60
60
7
1
2
0.9
150
–55 to +150
Test conditions
I
V
V
V
I
I
C
C
C
CE
EB
CE
= 500 mA, I
= 500 mA, I
= 0.1 mA, I
= 60 V, R
= 7 V, I
= 3 V, I
C
C
Unit
V
V
V
A
A
W
= 0
= 0.5 A*
BE
C
C
E
B
B
= 0
= 0.5 mA*
= 0.5 mA*
=
1
1
1