2sd1198a Panasonic Corporation of North America, 2sd1198a Datasheet
2sd1198a
Manufacturer Part Number
2sd1198a
Description
Silicon Npn Epitaxial Planer Type Darlington
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1198A.pdf
(3 pages)
Transistors
2SD1198, 2SD1198A
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
■ Absolute Maximum Ratings T
Note) * : Printed circuit board: Copper foil area of 1 cm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
• Forward current transfer ratio h
• A shunt resistor is omitted from the driver.
• M type package allowing easy automatic and manual insertion as
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SD1198
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
priate to the driver circuit of motors and printer hammer: h
000 to 20 000.
well as stand-alone fixing to the printed circuit board.
2. * 1: Pulse measurement
board thickness of 1.7 mm for the collector portion
* 2: Rank classification
Rank
Parameter
Parameter
h
FE
4 000 to 10 000 8 000 to 20 000
2SD1198
2SD1198A
2SD1198A
*
2SD1198
2SD1198A
2SD1198
2SD1198A
* 1, 2
Q
* 1
FE
* 1
is designed high, which is appro-
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
I
T
V
V
V
CBO
CEO
EBO
a
CP
I
I
C
stg
CE(sat)
BE(sat)
C
h
CBO
EBO
j
f
CBO
CEO
EBO
= 25°C
FE
T
R
−55 to +150
Rating
I
I
I
V
V
V
V
I
I
V
C
C
E
C
C
150
2
CB
1.5
CB
CB
EB
CE
30
60
25
50
= 100 µA, I
= 100 µA, I
= 1 mA, I
= 1 A, I
= 1 A, I
5
1
1
or more, and the
SJC00209BED
= 4 V, I
= 10 V, I
= 10 V, I
= 25 V, I
= 45 V, I
B
B
= 1 mA
= 1 mA
B
C
Conditions
E
Unit
C
E
E
= 0
C
= 0
FE
°C
°C
E
W
V
V
V
A
A
= −50 mA, f = 200 MHz
= 0
= 0
= 1 A
= 0
= 0
= 4
Internal Connection
R 0.7
(1.5)
3
(2.5)
B
(0.85)
0.55
4 000
6.9
(1.5)
Min
30
60
25
50
5
±0.1
±0.1
2
R 0.9
(2.5)
1
Typ
≈ 200 Ω
150
20 000
Max
100
100
1.8
2.2
2.5
M-A1 Package
C
E
±0.1
1: Base
2: Collector
3: Emitter
0.45
Unit: mm
(1.0)
±0.05
MHz
Unit
nA
nA
V
V
V
V
V
1
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2sd1198a Summary of contents
Page 1
... Transistors 2SD1198, 2SD1198A Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio h FE priate to the driver circuit of motors and printer hammer: h 000 to 20 000. • A shunt resistor is omitted from the driver. • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. ■ ...
Page 2
... 1.2 Copper plate at the collector 2 is more than area, 1 thickness 1.0 0.8 0.6 0.4 0 100 120 140 160 ( °C ) Ambient temperature T a 100000 = 75° 25°C 10000 −25°C 1 000 100 10 0 ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...