2sd1162 Inchange Semiconductor Company, 2sd1162 Datasheet

2sd1162

Manufacturer Part Number

2sd1162

Description

Isc Silicon Npn Darlington Power Transistor

Manufacturer

Inchange Semiconductor Company

Datasheet

1.2SD1162.pdf (2 pages)

Current page: 1 of 2
Download datasheet (112Kb)

INCHANGE Semiconductor

isc

DESCRIPTION

·High DC Current Gain-

·High Switching Speed

·Low Collector Saturation Voltage

APPLICATIONS

·Designed for high voltage, low speed switching industrial

ABSOLUTE MAXIMUM RATINGS(T

isc Website：www.iscsemi.cn

SYMBOL

: h

use.

CBO

CEO

EBO

stg

Silicon NPN Darlington Power Transistor

= 400(Min.)@I

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Peak

Base Current-Continuous

Collector Power Dissipation

@ T

Collector Power Dissipation

@ T

Junction Temperature

Storage Temperature Range

=25℃

PARAMETER

= 2A

=25

℃)

-55~150

VALUE

150

500

300

0.5

1.5

UNIT

℃

isc

Product Specification

2SD1162

Related parts for 2sd1162

2sd1162 Summary of contents

Page 1

... Base Current-Continuous B B Collector Power Dissipation @ T =25℃ Collector Power Dissipation @ T =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 500 V 300 0 1.5 ℃ 150 ℃ -55~150 isc Product Specification 2SD1162 ...

Page 2

... I = 5mA 400V 3A 30mA ≈150V R = 50Ω, 1000-3000 2 isc Product Specification 2SD1162 MIN TYP. MAX 300 1.5 2.0 10 400 3000 100 1 UNIT μA μs μs μs ...

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