2sd1187 Inchange Semiconductor Company, 2sd1187 Datasheet
2sd1187
Manufacturer Part Number
2sd1187
Description
Isc Silicon Npn Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SD1187.pdf
(2 pages)
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INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
·Low Collector Saturation Voltage-
·High Power Dissipation
APPLICATIONS
·High power switching applications
·DC-DC converter and DC-AC inverter applications
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
: V
: V
V
V
V
T
P
T
CBO
CEO
EBO
I
I
stg
C
B
C
J
(BR)CEO
CE(sat)
B
Silicon NPN Power Transistor
= 0.5V(Max.) @ I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
= 80V(Min)
C
=25℃
PARAMETER
C
= 6A
a
=25
℃)
-55~150
VALUE
100
150
80
10
80
5
2
UNIT
W
℃
℃
V
V
V
A
A
isc
Product Specification
2SD1187
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2sd1187 Summary of contents
Page 1
... Emitter-Base Voltage EBO I Collector Current-Continuous C I Base Current-Continuous B B Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 100 ℃ 150 ℃ -55~150 isc Product Specification 2SD1187 ...
Page 2
... 6A 10V 1.0MHz test 1A 0.3A 5Ω 30V =20μs; Duty Cycle≤ 2SD1187 MIN TYP. MAX UNIT 80 V 0.5 V 1.4 V μA 10 μ 240 30 350 pF 10 MHz μs 0.5 μs 2.5 μs 0.8 ...