2sd1368cctl-e Renesas Electronics Corporation., 2sd1368cctl-e Datasheet - Page 2

• Manufacturer Part Number: 2sd1368cctl-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SD1368
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Note:
h
Rev.2.00 Aug 10, 2005 page 2 of 5
FE
Mark
1. The 2SD1368 is grouped by h
160 to 320
Item
CB
250 to 500
CC
FE
Symbol
V
V
V
V
V
h
as follows.
(BR)CBO
(BR)CEO
(BR)EBO
Cob
I
I
CE(sat)
BE(sat)
CBO
FE
EBO
f
T
*
1
Min
100
160
50
—
—
—
—
—
—
6
Typ
100
20
—
—
—
—
—
—
—
—
Max
500
0.1
0.1
0.3
1.2
—
—
—
—
—
MHz
Unit
pF
V
V
V
V
V
A
A
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
CB
EB
CE
CE
CB
= 1 A, I
= 1 A, I
= 10 A, I
= 10 A, I
= 1 mA, R
= 80 V, I
= 4 V, I
= 2 V, I
= 2 V, I
= 10 V, I
Test conditions
B
B
= 0.1 A, Pulse
= 0.1 A, Pulse
C
C
C
C
E
BE
E
E
= 0
= 0.1 A
= 10 mA, Pulse
= 0
= 0
= 0
= 0, f = 1 MHz
=
(Ta = 25°C)