2sd1979g Panasonic Corporation of North America, 2sd1979g Datasheet
2sd1979g
Manufacturer Part Number
2sd1979g
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1979G.pdf
(4 pages)
Transistors
2SD1979G
Silicon NPN epitaxial planar type
For low frequency amplification
For muting
For DC-DC converter
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• Low ON resistance R
• High forward current transfer ratio h
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistance
automatic insertion through the tape packing and the magazine
packing.
2. * 1: Rank classification
Parameter
Rank
Parameter
h
* 2
FE
on
500 to 1 500
This product complies with the RoHS Directive (EU 2002/95/EC).
* 1
S
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
CBO
I
T
V
CEO
EBO
a
CP
I
I
800 to 2 500
stg
V
C
CE(sat)
C
R
C
h
CBO
j
EBO
f
CEO
= 25°C
FE
BE
T
ob
on
T
−55 to +150
Rating
I
V
V
V
V
I
V
V
C
C
300
500
150
150
CE
CB
EB
CE
CB
CB
50
20
25
= 1 mA, I
= 30 mA, I
SJC00377AED
= 2 V, I
= 25 V, I
= 2 V, I
= 50 V, I
= 6 V, I
= 10 V, I
* 2: R
B
C
C
E
Conditions
Unit
B
mW
C
E
E
mA
mA
= 0
= 4 mA
= 4 mA
= −4 mA, f = 200 MHz
°C
°C
V
V
V
= 3 mA
= 0
= 0
= 0, f = 1 MHz
on
Measuremet circuit
I
B
= 5 mA
■ Package
• Code
• Marking Symbol: 3W
• Pin Name
R
on
SMini3-F2
1: Base
2: Emitter
3: Collector
=
V
V
A
B
− V
B
Min
V
500
× 1 000 (Ω)
20
B
1 kΩ
V
V
Typ
V
0.6
4.5
80
1
A
f = 1 kHz
V = 0.3 V
2 500
Max
0.1
1
1
MHz
Unit
µA
µA
pF
V
V
V
Ω
1
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2sd1979g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1979G Silicon NPN epitaxial planar type For low frequency amplification For muting For DC-DC converter ■ Features • Low ON resistance R on • High forward current transfer ratio h • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1979G 200 160 120 120 160 ( °C ) Ambient temperature T a CE(sat 0.1 = 75° 25°C −25°C 0.01 0.001 0 100 ( mA ) Collector current I C ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0. (0.65) (0.65) 1.30 ±0.10 (5°) Unit: mm +0.05 0.13 − 0.02 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...