2sd1911 Inchange Semiconductor Company, 2sd1911 Datasheet
2sd1911
Manufacturer Part Number
2sd1911
Description
Silicon Npn Power Transistors
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SD1911.pdf
(3 pages)
Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High breakdown voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in TV horizontal output applications
PINNING
Absolute maximum ratings(T
SYMBOL
V
V
V
PIN
T
I
P
CBO
CEO
EBO
I
CM
T
1
2
3
C
stg
C
j
Base
Collector
Emitter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
DESCRIPTION
PARAMETER
a
=25
℃)
Open emitter
Open base
Open collector
T
C
=25℃
Fig.1 simplified outline (TO-3PML) and symbol
CONDITIONS
Product Specification
-55~150
VALUE
1500
600
150
2SD1911
10
50
6
5
UNIT
℃
℃
W
V
V
V
A
A
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2sd1911 Summary of contents
Page 1
... Collector power dissipation C T Junction temperature j T Storage temperature stg Fig.1 simplified outline (TO-3PML) and symbol ℃) =25 a CONDITIONS Open emitter Open base Open collector T =25℃ C Product Specification 2SD1911 VALUE UNIT 1500 V 600 ℃ 150 ℃ -55~150 ...
Page 2
... Emitter cut-off current EBO h DC current gain FE Diode forward voltage V F CONDITIONS MIN I =0. 600 =4. =1. =4. =1. =800V = Product Specification 2SD1911 TYP. MAX UNIT V 5.0 V 1.5 V μ 200 2.0 V ...
Page 3
... Inchange Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) Product Specification 3 2SD1911 ...