2sd1918 ROHM Co. Ltd., 2sd1918 Datasheet

no-image

2sd1918

Manufacturer Part Number
2sd1918
Description
Power Transistor 160v , 1.5a
Manufacturer
ROHM Co. Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD1918
Manufacturer:
ROHM
Quantity:
30 000
Part Number:
2sd1918-TLQ
Manufacturer:
TI
Quantity:
2 400
Part Number:
2sd1918Q
Manufacturer:
ROHM
Quantity:
371
Part Number:
2sd1918TLQ
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
1) High breakdown voltage.(BV
2) Low collector output capacitance.
3) High transition frequency.(f
4) Complements the 2SB1275 / 2SB1236A.
*
3
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
1 Pw=200msec duty=1/2
2
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Storage temperature
Measured using pulse current.
Collector
power
dissipation
Junction temperature
Denotes h
Features
Absolute maximum ratings (Ta = 25°C)
Packaging specifications and h
Electrical characteristics (Ta = 25°C)
Printed circuit board 1.7mm thick, collector plating 1cm
When mounted on a 40 x 40 x 0.7mm ceramic board.
(Typ. 20pF at V
Basic ordering unit (pieces)
Parameter
FE
Package
Marking
Code
Type
2SD1857A
2SD2211
2SD1918
h
FE
Parameter
2SD2211,2SD1918
2SD1857A
CB
= 10V)
Symbol
Tstg
V
V
V
P
Tj
CBO
CEO
EBO
I
C
C
2SD2211
MPT3
T100
1000
QR
DQ*
T
= 80MH
CEO
−55 ∼+150
2SD1918
2
Limits
CPT3
Symbol
2500
V
V
BV
BV
BV
160
160
150
or larger
1.5
0.5
QR
10
FE
TL
Cob
I
I
5
3
1
2
1
CE(sat)
BE(sat)
h
CBO
EBO
= 160V)
f
FE
CBO
CEO
EBO
T
Z
.
)
2SD1857A
2500
ATV
TV2
PQ
Min.
160
160
120
82
5
W(Tc=25°C)
A(Pulse)
A(DC)
Unit
°C
°C
W
W
W
W
V
V
V
Typ.
80
20
∗1
∗2
∗3
Max.
390
270
1.5
1
1
2
2SD2211 / 2SD1918 / 2SD1857A
External dimensions (Unit : mm)
2SD2211
2SD1918
2SD1857A
ROHM : MPT3
EIAJ : SC-62
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
MHz
Unit
µA
µA
pF
V
V
V
V
V
I
I
I
V
V
I
I
V
V
V
C
C
E
C
C
CB
EB
CE
CE
CB
/I
/I
= 50µA
= 1mA
= 50µA
B
B
/I
= 120V
= 4V
= 5V , I
= 10V , I
= 1A/0.1A
= 1A/0.1A
C
= 5V/0.1A
0.65Max.
E
( 1 )
= − 0.1A , f = 30MHz
E
= 0A , f = 1MHz
0.8Min.
( 2 )
2.54
6.8
1.0
2.54
( 3 )
2.5
( 1 )
( 2 )
( 3 )
0.5
1.5
Conditions
0.9
9.5
4.0
5.5
2.5
Taping specifications
1.05
1.5
0.5
C0.5
2.5
0.45
Rev.A
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Emitter
(2) Collector
(3) Base
1/3

Related parts for 2sd1918

2sd1918 Summary of contents

Page 1

... Emitter cutoff current V Collector-emitter saturation voltage CE(sat) V Base-emitter saturation voltage BE(sat) 2SD2211,2SD1918 DC current h transfer ratio 2SD1857A Transition frequency Cob Output capacitance ∗ Measured using pulse current. 2SD2211 / 2SD1918 / 2SD1857A External dimensions (Unit : mm) = 160V) 2SD2211 ) Z ROHM : MPT3 EIAJ : SC-62 Unit 2SD1918 A(DC) ∗1 A(Pulse) ∗2 ...

Page 2

... Fig.4 DC current gain vs. collector current ( ΙΙ ) 1000 Ta=25°C =5V V 500 CE 200 100 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 (mA) EMITTER CURRENT : I E Fig.7 Gain bandwidth products vs. emitter current 2SD2211 / 2SD1918 / 2SD1857A Ta=100°C 0.5 Ta=25°C Ta= −25°C 0.2 0.1 0.05 0.02 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 ...

Page 3

... Transistors 10 Ta=25°C ∗Single 5 Ic (Pulse ) ∗ Max nonrepetitive 2 pulse 1 500m 200m 100m 50m 20m 10m 0.1 0.2 0 100 200 500 1000 (V) COLLECTOR TO EMITTER VOLTAGE : V CE Fig.10 Safe operating area (2SD1918) 2SD2211 / 2SD1918 / 2SD1857A Rev.A 3/3 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

Related keywords