adum6000 Analog Devices, Inc., adum6000 Datasheet - Page 4

• Manufacturer Part Number: adum6000
• Description: Isolated, 5 Kv, Dc-to-dc Converter Adum6000
• Manufacturer: Analog Devices, Inc.

ADuM6000
ELECTRICAL CHARACTERISTICS—5 V PRIMARY INPUT SUPPLY/3.3 V SECONDARY ISOLATED SUPPLY
4.5 V ≤ V
recommended operating range, unless otherwise noted. Typical specifications are at T
Table 4.
Parameter
DC-TO-DC CONVERTER POWER SUPPLY
PACKAGE CHARACTERISTICS
Table 5.
Parameter
RESISTANCE AND CAPACITANCE
THERMAL SHUTDOWN
1
2
3
This device is considered a 2-terminal device; Pin 1 through Pin 8 are shorted together, and Pin 9 through Pin 16 are shorted together.
Input capacitance is from any input data pin to ground.
Refer to the
Setpoint
Line Regulation
Load Regulation
Output Ripple
Output Noise
Switching Frequency
PWM Frequency
I
I
Undervoltage Lockout, V
Resistance (Input-to-Output)
Capacitance (Input-to-Output)
Input Capacitance
IC Junction-to-Ambient Thermal
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
DD1
DD1
Maximum Output Supply Current
Efficiency at Maximum Output
Supplies
Positive-Going Threshold
Negative-Going Threshold
Hysteresis
Resistance
Supply Current, Full V
Supply Current, No V
Supply Current
DD1
Thermal Analysis
≤ 5.5 V, V
2
SEL
= GND
section for thermal model definitions.
ISO
DD1
ISO
Load
Load
and V
1
ISO
1
, each voltage is relative to its respective ground. Minimum/maximum specifications apply over the entire
ISO
Symbol
V
V
V
V
V
f
f
I
I
I
UVLO
V
V
V
Symbol
R
C
C
θ
TS
TS
DD1(MAX)
ISO(MAX)
DD1(Q)
OSC
PWM
I-O
JA
ISO
ISO(LINE)
ISO(LOAD)
ISO(RIP)
ISO(N)
UV+
UV−
UVH
I-O
I
SD
SD-HYS
Min
3.0
100
Min
Rev. 0 | Page 4 of 16
Typ
3.3
1
1
50
130
180
625
250
26
4
2.7
2.4
0.3
Typ
10
2.2
4.0
45
150
20
12
Max
3.6
5
12
Max
A
= 25°C, V
Unit
Unit
V
mV/V
%
mV p-p
mV p-p
MHz
kHz
mA
mA
%
mA
V
V
V
Ω
pF
pF
°C/W
°C
°C
DD1
= 5.0 V, V
Test Conditions/Comments
I
I
I
20 MHz bandwidth, C
I
C
V
I
I
Test Conditions/Comments
f = 1 MHz
Thermocouple is located at the center of
the package underside; test conducted
on a 4-layer board with thin traces
T
ISO
ISO
ISO
ISO
ISO
ISO
J
BO
ISO
rising
= 0 mA
= 50 mA, V
= 10 mA to 90 mA
= 90 mA
= 100 mA
= 0 mA
= 0.1 μF||10 μF, I
> 3.0 V
ISO
= 3.3 V, and V
DD1
= 4.5 V to 5.5 V
ISO
BO
= 90 mA
= 0.1 μF||10 μF,
SEL
= GND
3
ISO
.