hn58v66ati-10e Renesas Electronics Corporation., hn58v66ati-10e Datasheet - Page 10
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hn58v66ati-10e
Manufacturer Part Number
hn58v66ati-10e
Description
64k Eeprom 8-kword X 8-bit Ready/busy Function, Res Function Hn58v66a Wide Temperature Range Version
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HN58V66ATI-10E.pdf
(28 pages)
HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Write Cycle 2 (4.5 ≤ V
Parameter
Address setup time
Address hold time
Data setup time
Data hold time
Data latch time
Byte load cycle
Byte load window
Write cycle time
Time to device busy
Write start time
Reset protect time*
Reset high time*
Notes: 1. t
Rev.3.00, Feb.02.2004, page 10 of 26
to write setup time (
hold time (
pulse width (
to write setup time
hold time
to write setup time (
hold time (
pulse width (
2. This function is supported by only the HN58V66A.
3. Use this device in longer cycle than this value.
4. t
5. Next read or write operation can be initiated after t
6. This parameter is sampled and not 100% tested.
7. A6 through A12 are page address and these addresses are latched at the first falling edge of
8. A6 through A12 are page address and these addresses are latched at the first falling edge of
9. See AC read characteristics.
are no longer driven.
automatically completes the internal write operation within this value.
DF
WC
and t
.
must be longer than this value unless polling techniques or RDY/
2, 6
controlled)
controlled)
2
DFR
controlled)
controlled)
are defined as the time at which the outputs achieve the open circuit conditions and
CC
≤ 5.5 V)
controlled)
controlled)
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AS
AH
CS
CH
WS
WH
OES
OEH
DS
DH
WP
CW
DL
BLC
BL
WC
DB
DW
RP
RES
Min*
0
50
0
0
0
0
0
0
50
0
100
100
50
0.2
100
120
0*
100
1
DW
5
if polling techniques or RDY/
3
Typ
Max
30
10*
4
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ms
ns
ns
µs
µs
are used. This device
Test conditions
are used.
.