hn58s65a Renesas Electronics Corporation., hn58s65a Datasheet

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hn58s65a

Manufacturer Part Number
hn58s65a
Description
64 K Eeprom 8-kword X 8-bit Ready/busy Function
Manufacturer
Renesas Electronics Corporation.
Datasheet
Description
The Hitachi HN58S65A series is electrically erasable and programmable ROM organized as 8192-word
MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte
page programming function to make their write operations faster.
Features
Preliminary: This document contains information on a new product. Specifications and information
contained herein are subject to change without notice.
8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
Single supply: 2.2 to 3.6 V
Access time: 150 ns (max)
Power dissipation
On-chip latches: address, data, CE, OE, WE
Automatic byte write: 15 ms (max)
Automatic page write (64 bytes): 15 ms (max)
Ready/Busy
Data polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
10
10 years data retention
Software data protection
Industrial versions (Temperature range: – 40 to + 85˚C) are also available.
5
Active: 10 mW/MHz (typ)
Standby: 36 W (max)
erase/write cycles (in page mode)
64 k EEPROM (8-kword 8-bit)
HN58S65A Series
Ready/Busy function
ADE-203-691A (Z)
Preliminary
Nov. 1997
Rev. 0.3

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hn58s65a Summary of contents

Page 1

... EEPROM (8-kword 8-bit) Ready/Busy function Description The Hitachi HN58S65A series is electrically erasable and programmable ROM organized as 8192-word 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster ...

Page 2

... HN58S65A Series Ordering Information Type No. Access time HN58S65AT-15 150 ns Pin Arrangement I/O0 19 I/ I/O3 23 I/O4 24 I/O5 25 I/ A10 Pin Description Pin name Function A0 to A12 Address input I/O0 to I/O7 Data input/output OE Output enable CE Chip enable WE Write enable V Power supply ...

Page 3

... A6 to A12 Operation Table CE Operation Read V IL Standby V IH Write V IL Deselect V IL Write Inhibit Data Polling V IL Notes Don’t care HN58S65A Series I/O0 Y decoder X decoder Memory array Data latch OE WE RDY/Busy V V High High High High-Z ...

Page 4

... HN58S65A Series Absolute Maximum Ratings Parameter Power supply voltage relative to V Input voltage relative Operating temperature range * Storage temperature range Notes: 1. Vin min : –3.0 V for pulse width 2. Including electrical characteristics and data retention. 3. Should not exceed V CC Recommended DC Operating Conditions ...

Page 5

... 2.7 to 3.6 V 2 2 HN58S65A -15 Min Max — 150 — 150 — HN58S65A Series Unit Test conditions pF Vin = Vout = 2 Unit Test conditions ...

Page 6

... HN58S65A Series Write Cycle Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE hold time (CE controlled write setup time OE hold time Data setup time Data hold time WE pulse width (WE controlled) ...

Page 7

... Timing Waveforms Read Timing Waveform Address CE OE High WE Data Out t ACC Data out valid HN58S65A Series ...

Page 8

... HN58S65A Series Byte Write Timing Waveform(1) (WE Controlled) Address Din RDY/Busy OES t DS High OEH High-Z ...

Page 9

... Byte Write Timing Waveform(2) (CE Controlled) Address Din High-Z RDY/Busy OES t DS HN58S65A Series OEH High-Z ...

Page 10

... HN58S65A Series Page Write Timing Waveform(1) (WE Controlled) *5 Address A0 to A12 OES Din t DB High-Z RDY/Busy DL t BLC OEH t DW High-Z ...

Page 11

... OES Din t DB High-Z RDY/Busy Data Polling Timing Waveform Address OEH Din X I/ BLC Dout HN58S65A Series OEH t DW High OES t DW Dout X ...

Page 12

... HN58S65A Series Toggle Bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read. When the internal programming cycle is finished, toggling of I/O6 will stop and the device can be accessible for next read or program ...

Page 13

... Software Data Protection Timing Waveform(1) (in protection mode Address 1555 Data AA Software Data Protection Timing Waveform(2) (in non-protection mode Address 1555 0AAA Data BLC 1555 Write address 0AAA A0 Write data 1555 1555 0AAA 1555 HN58S65A Series t WC Normal active mode ...

Page 14

... HN58S65A Series Functional Description Automatic Page Write Page-mode write feature allows bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional bytes can be written in the same manner. Each additional byte load cycle must be started within 30 s from the preceding falling edge ...

Page 15

... EEPROM to program mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in an unprogrammable state while the CPU unstable state. Note: The EEPROM should be kept in unprogrammable state during V RESET signal CPU RESET * Unprogrammable HN58S65A Series max CC * Unprogrammable ...

Page 16

... HN58S65A Series (1) Protection by CE, OE realize the unprogrammable state, the input level of control pins must be held as shown in the table below Don’t care Pull- level Pull-down to V level Software data protection To prevent unintentional programming caused by noise generated by external circuits, this device has the software data protection function ...

Page 17

... Package Dimensions HN58S65AT Series (TFP-28DB) 8.00 8.20 Max 0.55 0.22 0.08 0.10 0.20 0.06 0.45 Max 0.10 Dimension including the plating thickness Base material dimension M 13.40 0.30 0 – 5 Hitachi Code JEDEC Code EIAJ Code Weight (reference value) HN58S65A Series Unit: mm 0.80 0.50 0.10 TFP-28DB — — 0.23 g ...

Page 18

... HN58S65A Series When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’ ...

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