as7c33128ft3236b ETC-unknow, as7c33128ft3236b Datasheet

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as7c33128ft3236b

Manufacturer Part Number
as7c33128ft3236b
Description
Manufacturer
ETC-unknow
Datasheet
Logic block diagram
February 2005
• Organization: 131,072 words × 32 or 36 bits
• Fast clock to data access: 6.5/7.5/8.0/10.0 ns
• Fast OE access time: 3.5/4.0 ns
• Fully synchronous flow through operation
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Individual byte write and Global write
Selection guide
Features
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
2/8/05; v.1.2
A[18:0]
ADSC
ADSP
GWE
BWE
CLK
ADV
3.3V 128K × 32/36 Flow Through Synchronous SRAM
BW
BW
BW
BW
CE0
CE1
CE2
OE
ZZ
a
d
b
c
Power
down
Alliance Semiconductor
19
–65
275
7.5
6.5
90
30
D
D
CE
CLK
CLK
D
CLK
D
CLK
D
CLK
D
CE
CLK
D
CLK
CLK
CE
CLR
Byte write
Byte write
Byte write
Byte write
registers
registers
registers
registers
register
Enable
Address
register
register
delay
Enable
DQ
DQ
DQ
DQ
d
b
c
a
Burst logic
Q
Q
Q
Q
Q
Q
Q
LBO
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate V
• Linear or interleaved burst control
• Snooze mode for reduced power standby
• Common data inputs and data outputs
19
Q0
Q1
250
-75
8.5
7.5
85
30
17
®
19
OE
36/32
Output
buffer
4
128K × 32/36
Memory
DQ[a:d]
array
36/32
215
36/32
-80
8.0
CLK
10
75
30
registers
Input
Copyright © Alliance Semiconductor. All rights reserved.
AS7C33128FT32B
AS7C33128FT36B
10.0
185
-10
12
75
30
DDQ
P. 1 of 19
Units
mA
mA
mA
ns
ns

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as7c33128ft3236b Summary of contents

Page 1

February 2005 3.3V 128K × 32/36 Flow Through Synchronous SRAM Features • Organization: 131,072 words × bits • Fast clock to data access: 6.5/7.5/8.0/10.0 ns • Fast OE access time: 3.5/4.0 ns • Fully synchronous flow through ...

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Mb Synchronous SRAM products list Org Part Number 256KX18 AS7C33256PFS18B 128KX32 AS7C33128PFS32B 128KX36 AS7C33128PFS36B 256KX18 AS7C33256PFD18B 128KX32 AS7C33128PFD32B 128KX36 AS7C33128PFD36B 256KX18 AS7C33256FT18B 128KX32 AS7C33128FT32B 128KX36 AS7C33128FT36B 256KX18 AS7C33256NTD18B 128KX32 AS7C33128NTD32B 128KX36 AS7C33128NTD36B 256KX18 AS7C33256NTF18B 128KX32 AS7C33128NTF32B 128KX36 AS7C33128NTF36B 1 ...

Page 3

Pin arrangement DQP / DDQ V 5 SSQ SSQ V 11 DDQ ...

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Functional description The AS7C33128FT32B/36B is a high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) device organized as 131,072 words × bits. Fast cycle times of 7.5/8.5/10/12 ns with clock access times (t expansion. Burst operation is ...

Page 5

Signal descriptions Pin I/O Properties CLK I CLOCK Clock. All inputs except OE, ZZ, and LBO are synchronous to this clock. A,A0,A1 I SYNC Address. Sampled when all chip enables are active and when ADSC or ADSP are asserted. DQ[a,b,c,d] ...

Page 6

Write enable truth table (per byte) Function GWE BWE L Write All Bytes H H Write Byte a H Write Byte c and d H Read H Key don’t care low high ...

Page 7

Synchronous truth table 1 CE0 CE1 CE2 ADSP ADSC ...

Page 8

Absolute maximum ratings Parameter Power supply voltage relative to GND Input voltage relative to GND (input pins) Input voltage relative to GND (I/O pins) Power dissipation DC output current Storage temperature (plastic) Temperature under bias Note: Stresses greater than those ...

Page 9

DC electrical characteristics for 3.3V I/O operation Parameter Sym † Input leakage current |I LI Output leakage current |I LO Input high (logic 1) voltage V Input low (logic 0) voltage V Output high voltage V OH Output low voltage ...

Page 10

Timing characteristics over operating range Parameter Cycle time Clock access time Output enable LOW to data valid Clock HIGH to output Low Z Data output invalid from clock HIGH Output enable LOW to output Low Z Output enable HIGH to ...

Page 11

Key to switching waveforms Rising input Timing waveform of read cycle CLK t t ADSPS ADSPH ADSP t ADSCS ADSC Address GWE, BWE t t CSS CSH CE0, CE2 CE1 ...

Page 12

Timing waveform of write cycle t CH CLK t ADSPS t ADSPH ADSP ADSC Address BWE BW[a:d] t CSS t CSH CE0, CE2 CE1 ADV OE Din D(A1) Read Suspend Q(A1) Note: Ý = XOR ...

Page 13

Timing waveform of read/write cycle (ADSP Controlled; ADSC High) CLK t ADSPS t ADSPH ADSP A1 Address BWE BW[a:d] CE0, CE2 CE1 ADV OE Din LZC Dout Q(A1) Read Q(A1) Note: Ý = XOR when LBO = ...

Page 14

Timing waveform of read/write cycle(ADSC controlled, ADSP = HIGH) CLK t t ADSCS ADSCH ADSC ADDRESS BWE BW[a: CSS CSH CE0,CE2 CE1 LZOE Q(A1) Q(A2) Dout Din READ READ READ Q(A1) ...

Page 15

Timing waveform of power down cycle CLK t t ADSPS ADSPS ADSP ADSC A1 ADDRESS BWE BW[a: CSS CSH CE0,CE2 CE1 ADV LZOE Din t HZC Dout Q(A1) t PDS ZZ ZZ Setup Cycle ...

Page 16

AC test conditions • Output load: see Figure B, except for t • Input pulse level: GND to 3V. See Figure A. • Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A. • Input ...

Page 17

Package Dimensions 100-pin quad flat pack (TQFP TQFP Min Max A1 0.05 0.15 A2 1.35 1.45 b 0.22 0.38 c 0.09 0.20 D 13.90 14.10 E 19.90 20.10 e 0.65 nominal Hd 15.85 16.15 He 21.80 22.20 ...

Page 18

Ordering information Package Width –65 AS7C33128FT32B- TQFP x32 65TQC AS7C33128FT32B- TQFP x32 65TQI AS7C33128FT36B- TQFP x36 65TQC AS7C33128FT36B- TQFP x36 65TQI Note: Add suffix ‘N’ to the above part numbers for Lead Free Parts (Ex. Part numbering guide AS7C 33 ...

Page 19

Alliance Semiconductor Corporation 2575, Augustine Drive, Santa Clara, CA 95054 Tel: 408 - 855 - 4900 Fax: 408 - 855 - 4999 www.alsc.com © Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt ...

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