as7c33512ntf3236a ETC-unknow, as7c33512ntf3236a Datasheet - Page 7

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as7c33512ntf3236a

Manufacturer Part Number
as7c33512ntf3236a
Description
Manufacturer
ETC-unknow
Datasheet
State diagram for NTD SRAM
Absolute maximum ratings
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
*
Recommended operating conditions at 2.5V I/O
*
V
V
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
Short circuit output current
Storage temperature
Temperature under bias
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Supply voltage for inputs
Supply voltage for I/O
Ground supply
DDQ
DDQ
4/21/05, v 1.3
cannot be greater than V
cannot be greater than V
Parameter
Parameter
Parameter
DD
DD
Read
Write
Symbol
Symbol
V
V
Read
Writ
V
V
DDQ
Vss
DDQ
Vss
DD
DD
*
*
Alliance Semiconductor
Write
Burst
Read
Burst
V
3.135
3.135
3.135
2.375
Min
Min
Symbol
DD
0
0
I
T
V
V
T
OUT
, V
P
bias
stg
IN
IN
d
DDQ
®
Nominal
Nominal
3.3
3.3
3.3
2.5
Burs
Dsel
0
0
Burst
Min
–0.5
–0.5
–0.5
–65
–65
Dsel
3.465
3.465
Burst
Burst
Max
V
Max
V
Burst
DD
0
DD
0
AS7C33512NTF32A/36A
V
V
DDQ
Unit
Unit
DD
Max
+150
+135
V
V
V
V
V
V
+4.6
1.8
20
+ 0.5
+ 0.5
P. 7 of 18
Unit
mA
o
o
W
V
V
V
C
C

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