as7c252mntf18a ETC-unknow, as7c252mntf18a Datasheet
as7c252mntf18a
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as7c252mntf18a Summary of contents
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... Address register burst logic CLK D Write delay addr. registers CLK Control logic CLK 18 18 Data D Q input register CLK OE -75 8.5 7.5 325 140 90 Alliance Semiconductor AS7C252MNTF18A CLK SRAM array Output buffer [a,b] -85 -10 Units 10 12 8.5 10 300 275 mA 130 130 ...
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... Mode PL-SCD PL-SCD PL-SCD PL-DCD PL-DCD PL-DCD NTD-PL NTD-PL NTD-PL NTD-FT NTD-FT NTD- Alliance Semiconductor AS7C252MNTF18A Speed 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 7.5/8.5/10 ns 7.5/8.5/10 ns 7.5/8.5/10 ns 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 7.5/8.5/10 ns 7.5/8.5/10 ns 7.5/8.5/ ...
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... V 20 DDQ V 21 SSQ DQb6 22 DQb7 23 24 DQPb SSQ V 27 DDQ 1/17/05, v 1.1 ® TQFP 14 x 20mm Alliance Semiconductor AS7C252MNTF18A DDQ 76 V SSQ 75 NC DQPa 74 DQa7 73 72 DQa6 V 71 SSQ 70 V DDQ 69 DQa5 68 DQa4 ...
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... Functional Description The AS7C252MNTF18A family is a high performance CMOS 32 Mbit synchronous Static Random Access Memory (SRAM) organized as 2,097,152 words × 18 bits and incorporates a LATE Write. This variation of the 32Mb+ synchronous SRAM uses the No Turnaround Delay (NTD write operation that improves bandwidth over flowthrough burst devices normal flowthrough burst device, the write data, command, and address are all applied to the device on the same clock edge ...
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... SNOOZE MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE. 1/17/05, v 1.1 ® Description or left floating, device follows interleaved Burst order. When DD is met. After entering SNOOZE MODE, all inputs except ZZ ZZI Alliance Semiconductor AS7C252MNTF18A ...
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... External NOP/WRITE ABORT (Begin Burst) High Next Current enables WRITEs to byte “b” (DQb pins). Alliance Semiconductor AS7C252MNTF18A A1A0 A1A0 A1A0 ...
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... IN V –0 – – OUT T –65 stg T –65 bias Symbol Min Nominal V 2.375 2 2.375 2.5 DDQ Vss 0 0 Alliance Semiconductor AS7C252MNTF18A Max Unit +4 0 0.5 V DDQ 1 +150 C o +135 C Max Unit 2.625 V 2.625 ...
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... Deselected < Max Deselected < 0.2V, I SB1 ≤ 0.2V or ≥ V all ≥ V Deselected Max I SB2 ≤ ≥ V all Alliance Semiconductor AS7C252MNTF18A Min Max < < OUT DDQ 1.7* V +0.3 DD 1.7* V DDQ -0.3** 0.7 -0.3** 0.7 1.7 – – ...
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... CSH t 2.0 – 2.0 CENS t 0.5 – 0.5 CENH t 2.0 – 2.0 ADVS t 0.5 – 0.5 ADVH Conditions Symbol ZZ > SB2 t PDS t PUS t ZZI t RZZI Alliance Semiconductor AS7C252MNTF18A -10 1 Unit Notes Min Max – 12 – ns – – 4.0 ns – 2.5 – ns 2,3,4 – 2.5 – – 0 – ns 2,3,4 – 4.0 ns 2,3,4 – 5.0 ...
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... Falling input HZOE Q(A2) Q(A2Y‘01) Q(A2Y‘10) BURST READ BURST BURST READ Q(A2) READ READ Q(A2Ý11) Q(A2Ý01) Q(A2Ý10) Alliance Semiconductor AS7C252MNTF18A Undefined t CYC A3 Q(A2Y‘11) Q(A3) Q(A3Y‘01) STALL READ BURST Q(A3) READ Q(A3Ý01 ...
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... ADV/LD OE D(A1) Din t HZOE Dout Q(n-1) WRITE DSEL Command D(A1) 1/17/05, v 1.1 ® D(A2) D(A2Y‘01) D(A2Y‘10) BURST BURST WRITE BURST WRITE WRITE D(A2) WRITE D(A2Ý10) D(A2Ý11) D(A2Ý01) Alliance Semiconductor AS7C252MNTF18A t CYC D(A3) D(A2Y‘11) D(A3Y‘01) STALL WRITE BURST D(A3) WRITE D(A3Ý01 ...
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... Note: Ý = XOR when LBO = high/no connect. Ý = ADD when LBO = low. 1/17/05, v 1.1 ® HZOE LZC OH D(A2) Q(A3) Q(A4) D(A2Ý01) BURST BURST READ READ WRITE READ Q(A3) Q(A4) D(A2Ý01) Q(A4Ý01) Alliance Semiconductor AS7C252MNTF18A t CYC HZC D(A5) Q(A6) D(A7) Q(A4Ý01) t LZOE WRITE READ WRITE DSEL D(A5) Q(A6) D(A7 ...
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... Command Q(A1) Q(A1 Ý Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low low. 1/17/05, v 1.1 ® Q(A1Ý10) Q(A1Ý01) STALL DSEL BURST BURST 01) Q(A1 10) DSEL Ý Alliance Semiconductor AS7C252MNTF18A A2 A3 D(A2) BURST WRITE WRITE BURST WRITE NOP D(A2) D(A2 10) Ý NOP D(A3) D(A2 01) Ý ...
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... Timing waveform of snooze mode CLK ZZ setup cycle ZZ t ZZI I supply I SB2 All inputs Deselect or Read Only (except ZZ) Dout 1/17/05, v 1.1 ® t PUS ZZ recovery cycle t RZZI Deselect or Read Only High-Z Alliance Semiconductor AS7C252MNTF18A Normal operation Cycle ...
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... L for 3.3V I/ DDQ for 2.5V I/O Figure B: Output load (A) at any given temperature and voltage. LZC IL Alliance Semiconductor AS7C252MNTF18A Thevenin equivalent: +3.3V for 3.3V I/O; /+2.5V for 2.5V I/O 319Ω/1667Ω D OUT 5 pF* 353Ω/1538Ω GND *including scope and jig capacitance Figure C: Output load(B) ...
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... Package dimensions 100-pin quad flat pack (TQFP) TQFP Min Max A1 0.05 0.15 A2 1.35 1.45 b 0.22 0.38 c 0.09 0.20 D 13.90 14.10 E 19.90 20.10 e 0.65 nominal Hd 15.85 16.15 He 21.80 22.20 L 0.45 0.75 L1 1.00 nominal α 0° 7° Dimensions in millimeters 1/17/05, v 1.1 ® Alliance Semiconductor AS7C252MNTF18A b e α ...
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... Ordering information Package &Width -75 AS7C252MNTF18A-75TQC TQFP x18 AS7C252MNTF18A-75TQI Note: Add suffix ‘N’ to the above part numbers for Lead Free Parts (Ex. AS7C252MNTF18A-85TQCN) Part numbering guide AS7C Alliance Semiconductor SRAM prefix 2. Operating voltage 2.5V 3. Organization Meg 4. NTF = No Turn-Around Delay. Flow-through mode 5 ...
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... Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use. AS7C252MNTF18A ® Copyright © Alliance Semiconductor All Rights Reserved Part Number: AS7C252MNTF18A Document Version: v 1.1 ...