gs74116agj-8i GSI Technology, gs74116agj-8i Datasheet - Page 8

• Manufacturer Part Number: gs74116agj-8i
• Description: 4mb Asynchronous Sram
• Manufacturer: GSI Technology

Write Cycle
* These parameters are sampled and are not 100% tested.
Rev: 1.08 2/2009
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output Low Z from end of write
Address valid to end of write
Chip enable to end of write
Byte enable to end of write
Write recovery time (WE)
Write recovery time (CE)
Write to output in High Z
Address set up time
Write pulse width
Data set up time
Write cycle time
Data hold time
Parameter
Address
CE
UB, LB
OE
Data Out
High impedance
Symbol
tWHZ
tWLZ
tWR1
tWC
tCW
tDW
tWR
tAW
tBW
tWP
tDH
tAS
Read Cycle 2: WE = V
*
*
8/16
tLZ
Min
tOLZ
tBLZ
5.5
5.5
5.5
5.5
—
8
4
0
0
0
0
3
tAA
tAC
-8
tAB
Max
tRC
tOE
3.5
—
—
—
—
—
—
—
—
—
—
—
IH
Min
4.5
10
—
7
7
7
0
7
0
0
0
3
Data valid
-10
tBHZ
tOHZ
Max
tHZ
—
—
—
—
—
—
—
—
—
—
—
4
Min
12
—
8
8
8
6
0
8
0
0
0
3
GS74116ATP/J/X
-12
© 2001, GSI Technology
Max
—
—
—
—
—
—
—
—
—
—
—
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns