fm803 Fairchild Semiconductor, fm803 Datasheet - Page 3

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fm803

Manufacturer Part Number
fm803
Description
3-pin Usupervisor Device
Manufacturer
Fairchild Semiconductor
Datasheet

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FM803 Rev. C.3
Absolute Maximum Ratings
Voltage on any terminal relative to GND
Input Current
Output Current: /RESET
These are stress ratings only, and functional operation is not implied for these levels or beyond. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Electrical Characteristics
V
Note 1: Testing in production is 25°C only. V
Note 2
Operating Voltage
Supply Current
Reset Threshold
Reset Threshold Tempco
V
Reset Active Timout Period
FM803 Output Low
Open-Drain Output Leakage
Current
CC
CC
V
/RESET
= full range, as noted under conditions. See Note 1.
to Reset Delay (Note 2)
CC
Typical values are at 25°C.
Parameter
Symbol
CC
V
V
V
I
CC
CC
TH
OL
= 5V for FM803L/M/J, V
SC70 Package (T
-0.3V to (V
T
T
T
FM803J/L/M
T
FM803R/S/T
FM803L
FM803M
FM803J
FM803T
FM803S
FM803R
V
T
V
FM803R/S/T
V
FM803J/L/M
V
V
A
A
A
A
A
CC
CC
CC
CC
CC
= 0°C to +70°C
= -40°C to +85°C
= -40°C to +85°C, V
= -40°C to +85°C, V
= -40°C to +85°C
-0.3V to +6.0V
= V
= V
= V
= < 1.0V, I
> V
TH
TH
TH
TH
CC
(min), I
(min), I
(max), /RESET = 1
CC
to (V
+ 0.3V)
T
T
T
T
T
T
Conditions
= 3.3V for FM803T/S and V
20mA
20mA
A
A
A
A
A
A
= -40°C to +85°C
= -40°C to +85°C
= -40°C to +85°C
= -40°C to +85°C
= -40°C to +85°C
= -40°C to +85°C
SINK
TH
SINK
SINK
- 100mV)
= 50µA
A
3
= 1.2mA,
= 3.2mA,
= 25
CC
CC
Rate of Rise of V
Continuous Power Dissipation (T
Operating Temperature Range
Storage Temperature Range
Lead Temperature (soldering, 10s)
< 5.5V
< 3.6V
°
C unless otherwise noted)
SC70-3
CC
= 3V for FM803R. Limits over temperature are guaranteed by design.
CC
Min
4.40
4.18
3.90
2.97
2.79
2.49
140
1.4
1.6
(Note 2)
Typ
4.63
4.38
4.00
3.08
2.93
2.63
256
A
30
10
9
6
= +70°C)
Max
4.86
4.52
4.18
3.19
3.00
2.70
0.35
560
5.5
5.5
0.4
0.3
15
10
-65°C to +150°C
7
-40°C to +85°C
www.fairchildsemi.com
www.fairchildsemi.com
100V/µs
ppm/°C
Units
174mW
+300°C
ms
µA
µA
µs
V
V
V

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