hy27uf162g2m Hynix Semiconductor, hy27uf162g2m Datasheet

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Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Edit Pin Description table 2) Edit Data Protection texts 3) Add Read ID table 4) Add Marking Information 5) Add Application note 6) ...

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Revision History Revision No. 7) Change AC characteristics tWH Before 20 (4) 0.2 After 15 8) Delete the errata. 9) Correct Address Cycle Map. 1) Delete the 1.8V device’s features. 2) Change DC characteristics (Table 9) - Operating Current I ...

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... Bytes x 64 Pages x 2,048 Blocks = (1K+32) Words x 64 pages x 2,048 Blocks PAGE SIZE - x8 device : ( spare) Bytes : HY27UF082G2M - x16 device: ( spare) Words : HY27UF162G2M BLOCK SIZE - x8 device: (128K + 4K spare) Bytes - x16 device: (64K + 2K spare) Words PAGE READ / PROGRAM - Random access: 30us (max.) - Sequential access: 50ns (min ...

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... This device includes also extra features like OTP/Unique ID area, Block Lock mechanism, Automatic Read at Power Up, Read ID2 extension. The HYNIX HY27UF(08/16)2G2M series is available TSOP1 mm, 52-ULGA mm. 1.1 Product List PART NUMBER HY27UF082G2M HY27UF162G2M Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash ORIZATION VCC RANGE x8 2 ...

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IO15 - IO8 IO7 - IO0 CLE ALE R/B Vcc Vss NC PRE Rev 0.5 / Feb. 2006 HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure1: Logic Diagram Data Input / Outputs (x16 only) Data ...

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Figure 2. 48TSOP1 Contactions, x8 and x16 Device Rev 0.5 / Feb. 2006 HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash 6 ...

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Figure 3. 52-ULGA Contactions, x8 Device Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash (Top view through package) HY27UF(08/16)2G2M Series 7 ...

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PIN DESCRIPTION Pin Name DATA INPUTS/OUTPUTS IO0-IO7 The IO pins allow to input command, address and data and to output data during read / program IO8-IO15(1) operations. The inputs are latched on the rising edge of Write Enable (WE). ...

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IO0 1st Cycle A0 2nd Cycle A8 3rd Cycle A12 4th Cycle A20 5th Cycle A28 NOTE must be set to Low. IO0 1st Cycle A0 2nd Cycle A8 3rd Cycle A11 4th Cycle A19 5th Cycle A27 ...

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CLE ALE ( NOTE: 1. With ...

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BUS OPERATION There are six standard bus operations that control the device. These are Command Input, Address Input, Data Input, Data Output, Write Protect, and Standby. Typically glitches less than Chip Enable, Write Enable and Read ...

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DEVICE OPERATION 3.1 Page Read. Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h and 30h to the command register along with four address cycles. In two consecutive read ...

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Block Erase. The Erase operation is done on a block basis. Block address loading is accomplished in two cycles initiated by an Erase Setup command (60h). Only address A18 to A28 (X8) or A17 to A27 (X16) is valid ...

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Read ID. The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h. Four read cycles sequentially output the manufacturer code (ADh), and the device code and 00h(don’t ...

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Cache Read Cache read operation allows automatic download of consecutive pages the whole device. Immediately after 1st latency end, while user can start reading out data, device internally starts reading following page. Start address of 1st page ...

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OTHER FEATURES 4.1 Data Protection & Power On/Off Sequence The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions whenever Vcc is below about 2V(3.3V device). WP pin provides ...

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Unlock - Command Sequence: Unlock block Command (23h) + Start block address + Command (24h) + End block address. See Fig. 24. - Unlocked blocks can be programmed or erased unlocked block’s status can be changed to ...

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Parameter Symbol Valid Block Number Symbol Ambient Operating Temperature (Commercial Temperature Range) T Ambient Operating Temperature (Extended Temperature Range) A Ambient Operating Temperature (Industrial Temperature Range) T Temperature Under Bias BIAS T Storage Temperature STG (2) Input or Output Voltage ...

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Rev 0.5 / Feb. 2006 HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 4: Block Diagram 19 ...

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Parameter Sequential Read Operating Current Program Erase Stand-by Current (TTL) Stand-by Current (CMOS) Input Leakage Current Output Leakage Current Input High Voltage Input Low Voltage Output High Voltage Level Output Low Voltage Level Output Low Current (R/B) Table 9: DC ...

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Item Input / Output Capacitance Input Capacitance Table 11: Pin Capacitance (TA=25℃, F=1.0MHz) Parameter Program Time Dummy Busy Time for Cache Program Dummy Busy Time for Cache Read Dummy Busy Time for the Lock or Lock-tight Block Number of partial ...

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Parameter CLE Setup time CLE Hold time CE setup time CE hold time WE pulse width ALE setup time ALE hold time Data setup time Data hold time Write Cycle time WE High hold time ALE to Data Loading Time ...

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Page Block IO Program Erase 0 Pass / Fail Pass / Fail Ready/Busy Ready/Busy 6 Ready/Busy Ready/Busy 7 Write Protect Write Protect DEVICE IDENTIFIER BYTE 1st 2nd ...

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... Reserved 64K Block Size 128K (Without Spare Area) 256K Reserved X8 Organization X16 Table 16: 4th Byte of Device Identifier Description Part Number Voltage HY27UF082G2M 3.3V HY27UF162G2M 3.3V Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash IO7 IO6 IO5 Bus Widt Manufacture Code ...

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Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Table 18: Lock Status Code Figure 5: Command Latch Cycle HY27UF(08/16)2G2M Series 25 ...

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Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 6: Address Latch Cycle HY27UF(08/16)2G2M Series 26 ...

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Figure 8: Sequential Out Cycle after Read (CLE=L, WE=H, ALE=L) Rev 0.5 / Feb. 2006 HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 7. Input Data Latch Cycle 27 ...

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Figure 10: Read1 Operation (Read One Page) Rev 0.5 / Feb. 2006 HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 9: Status Read Cycle 28 ...

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Figure 11: Read1 Operation intercepted by CE Rev 0.5 / Feb. 2006 HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash 29 ...

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Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 12 : Random Data output HY27UF(08/16)2G2M Series 30 ...

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Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 13: Page Program Operation HY27UF(08/16)2G2M Series 31 ...

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Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 14 : Random Data In HY27UF(08/16)2G2M Series 32 ...

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Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 15 : Copy Back Program HY27UF(08/16)2G2M Series 33 ...

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Rev 0.5 / Feb. 2006 HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 16 : Cache Program 34 ...

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Figure 17: Block Erase Operation (Erase One Block) Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 18: Read ID Operation HY27UF(08/16)2G2M Series 35 ...

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Figure 19: start address at page start :after 1st latency uninterrupted data flow Rev 0.5 / Feb. 2006 HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash 36 ...

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Figure 20: exit from cache read in 5us when device internally is reading Rev 0.5 / Feb. 2006 HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash 37 ...

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System Interface Using CE don’t care To simplify system interface, CE may be deasserted during data loading or sequential data-reading as shown below. So possible to connect NAND Flash to a microporcessor. The only function that was removed ...

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Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 23: Lock Command Figure 24: Unlock Command Sequence HY27UF(08/16)2G2M Series 39 ...

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Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 25: Lock Tight Command Figure 26: Lock Status Read Timing HY27UF(08/16)2G2M Series 40 ...

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Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 27: Automatic Read at Power On Figure 28: Reset Operation HY27UF(08/16)2G2M Series 41 ...

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Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 29: Power On/Off Timing HY27UF(08/16)2G2M Series 42 ...

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Figure 30: Ready/Busy Pin electrical specifications Rev 0.5 / Feb. 2006 HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash 43 ...

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Figure 32: page programming within a block Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 31: Lock/Unlock FSM Flow Cart HY27UF(08/16)2G2M Series 44 ...

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Bad Block Management Devices with Bad Blocks have the same quality level and the same AC and DC characteristics as devices where all the blocks are valid. A Bad Block does not affect the performance of valid blocks because it ...

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Write Protect Operation The Erase and Program Operations are automatically reset when WP goes Low (tWW = 100ns, min). The operations are enabled and disabled as follows (Figure 34~37) Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash ...

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Rev 0.5 / Feb. 2006 HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Figure 36: Enable Erasing Figure 37: Disable Erasing 47 ...

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APPENDIX : Extra Features 5.1 Automatic Page0 Read after Power Up The timing diagram related to this operation is shown in Fig. 27 Due to this functionality the CPU can directly download the boot loader from the first page ...

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Figure 38. 48pin-TSOP1 20mm, Package Outline Symbol alpha Table 20: 48pin-TSOP1 20mm, Package Mechanical Data Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / 128Mx16bit) NAND ...

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Figure 39. 52-ULGA 17mm, Package Outline Symbol CP1 CP2 Table 21: 52-ULGA 17mm, Package Mechanical Data Rev 0.5 / Feb. 2006 2Gbit (256Mx8bit / ...

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MARKING INFORMATION - ...

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Application Note 1. Power-on/off Sequence After power is on, the device starts an internal circuit initialization when the power supply voltage reaches a specific level. The device shows its internal initialization status with the Ready/Busy signal if initialization is on ...

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Automatic sleep mode for low power consumption The device provides the automatic sleep function for low power consumption. The device enters the automatic sleep mode by keeping CE at VIH level for 10us without any additional command input, and ...