hy27ug164g2m Hynix Semiconductor, hy27ug164g2m Datasheet - Page 19

• Manufacturer Part Number: hy27ug164g2m
• Description: 4gbit 512mx8bit / 256mx16bit Nand Flash
• Manufacturer: Hynix Semiconductor

Rev 0.7 / Feb. 2006
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Symbol
V
T
Valid Block Number
the device at these or any other conditions above those indicated in the Operating sections of this specification is
T
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Vcc
IO
BIAS
T
STG
A
(2)
Parameter
Ambient Operating Temperature (Commercial Temperature Range)
Ambient Operating Temperature (Extended Temperature Range)
Ambient Operating Temperature (Industrial Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Symbol
N
VB
Table 7: Absolute maximum ratings
Table 6: Valid Blocks Number
Parameter
4Gbit (512Mx8bit / 256Mx16bit) NAND Flash
4016
Min
HY27UG(08/16)4G(2/D)M Series
Typ
Max
4096
-50 to 125
-65 to 150
-0.6 to 4.6
-0.6 to 4.6
-25 to 85
-40 to 85
0 to 70
Value
3.3V
Blocks
Unit
Unit
℃
℃
℃
℃
℃
V
V
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