2sb1002cjtl-e Renesas Electronics Corporation., 2sb1002cjtl-e Datasheet - Page 2

• Manufacturer Part Number: 2sb1002cjtl-e
• Description: Silicon Pnp Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SB1002
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Rev.2.00 Aug 10, 2005 page 2 of 5
Item
Symbol
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
Cob
I
I
CE(sat)
BE(sat)
h
CBO
EBO
f
FE
T
Min
–70
–50
160
–6
—
—
—
—
—
—
Typ
150
35
—
—
—
—
—
—
—
—
Max
–0.1
–0.1
–0.6
–1.2
320
—
—
—
—
—
MHz
Unit
pF
V
V
V
V
V
A
A
I
I
I
V
V
V
I
I
I
I
V
I
V
f = 1 MHz
C
C
E
C
B
C
B
C
CB
EB
CE
CE
CB
= –10 A, I
= –1 mA, R
= –10 A, I
= –1 A,
= –0.1 A (Pulse test)
= –1 A,
= –0.1 A (Pulse test)
= –10 mA (Pulse test)
= –50 V, I
= –4 V, I
= –2 V, I
= –2 V,
= –10 V, I
Test conditions
C
C
E
C
BE
E
E
= 0
= –0.1 A
= 0
= 0
= 0
= 0,
=
(Ta = 25°C)