2sd2686 TOSHIBA Semiconductor CORPORATION, 2sd2686 Datasheet - Page 2
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2sd2686
Manufacturer Part Number
2sd2686
Description
Toshiba Transistor Silicon Npn Epitaxial Type Darlington Power
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SD2686.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD2686
Manufacturer:
toshiba
Quantity:
30 000
Part Number:
2SD2686
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
2sd2686(TE12L
Manufacturer:
infineon
Quantity:
150
Company:
Part Number:
2sd2686(TE12L,F)
Manufacturer:
SONY
Quantity:
8 000
Electrical Characteristics
Figure 1. Switching Time Test Circuit
Collector cutoff current
Emitter cutoff current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Switching time
Duty cycle<1%
20μs
Characteristic
& Timing Chart
Input
Storage time
Rise time
Fall time
VCC≒30V
(Ta = 25°C)
V
V
V
Output
CE (sat) (1)
CE (sat) (2)
V
Symbol
(BR) CEO
BE (sat)
I
I
I
CBO
CEO
h
EBO
t
t
stg
on
FE
t
f
V
V
V
I
V
I
I
I
See Figure 1 circuit diagram.
V
C
C
C
C
CB
CE
EB
CE
CC
= 10 mA, I
= 0.5 A, I
= 1.0 A, I
= 1.0 A, I
2
= 8 V, I
= 45 V, I
= 45 V, I
= 2 V, I
∼ − 30 V, R
Lot No.
Test Condition
B
B
B
Marking
C
C
B
E
E
= 1 mA
= 1 mA
= 1 mA
= 0
= 1.0 A
L
= 0
= 0
= 0
3
= 30 Ω
H
2000
0.80
Min
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Part No. (or abbreviation code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Typ.
0.4
4.0
0.6
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2006-11-21
2SD2686
Max
4.0
1.2
1.5
2.0
10
10
70
⎯
⎯
⎯
⎯
Unit
mA
μA
μA
μs
V
V
V
V