2sd2686 TOSHIBA Semiconductor CORPORATION, 2sd2686 Datasheet - Page 2

• Manufacturer Part Number: 2sd2686
• Description: Toshiba Transistor Silicon Npn Epitaxial Type Darlington Power
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Figure 1. Switching Time Test Circuit
Collector cutoff current
Emitter cutoff current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Switching time
Duty cycle＜1％
20μs
Characteristic
& Timing Chart
Input
Storage time
Rise time
Fall time
VCC≒30V
(Ta = 25°C)
V
V
V
Output
CE (sat) (1)
CE (sat) (2)
V
Symbol
(BR) CEO
BE (sat)
I
I
I
CBO
CEO
h
EBO
t
t
stg
on
FE
t
f
V
V
V
I
V
I
I
I
See Figure 1 circuit diagram.
V
C
C
C
C
CB
CE
EB
CE
CC
= 10 mA, I
= 0.5 A, I
= 1.0 A, I
= 1.0 A, I
2
= 8 V, I
= 45 V, I
= 45 V, I
= 2 V, I
∼ − 30 V, R
Lot No.
Test Condition
B
B
B
Marking
C
C
B
E
E
= 1 mA
= 1 mA
= 1 mA
= 0
= 1.0 A
L
= 0
= 0
= 0
3
= 30 Ω
H
2000
0.80
Min
50
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Part No. (or abbreviation code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Typ.
0.4
4.0
0.6
60
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2006-11-21
2SD2686
Max
4.0
1.2
1.5
2.0
10
10
70
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Unit
mA
μA
μA
μs
V
V
V
V