2sd2719 TOSHIBA Semiconductor CORPORATION, 2sd2719 Datasheet - Page 2

• Manufacturer Part Number: 2sd2719
• Description: Toshiba Transistor Silicon Npn Epitaxial Type Darlington Power
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Marking
Collector cutoff current
Emitter cutoff current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Switching time
Lot code (year)
Dot: even year
No dot: odd year
Characteristic
W V
Turn-on time
Storage time
Fall time
(Ta = 25°C)
Lot code (month)
Part No. (or abbreviation code)
V
V
V
CE (sat) (1)
CE (sat) (2)
V
Symbol
(BR) CEO
BE (sat)
I
I
I
CBO
CEO
h
EBO
t
t
stg
on
FE
t
f
V
V
V
I
V
I
I
I
5V
Duty cycle ≦1%
Input 20 μs
C
C
C
C
CB
CE
EB
CE
= 10 mA, I
= 0.5 A, I
= 1 A, I
= 1 A, I
2
= 8 V, I
= 45 V, I
= 45 V, I
= 2 V, I
Test Condition
B
B
B
= 1 mA
= 1 mA
C
C
B
E
E
= 1 mA
= 0
= 1 A
= 0
= 0
= 0
V
CC
= 30 V
Output
2000
0.80
Min
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.4
4.0
0.6
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2007-06-07
2SD2719
Max
4.0
1.2
1.5
2.0
10
10
70
⎯
⎯
⎯
⎯
Unit
mA
μA
μA
μs
V
V
V
V