alm-1322 Avago Technologies, alm-1322 Datasheet - Page 2

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alm-1322

Manufacturer Part Number
alm-1322
Description
1.8-2.2ghz Very Low Noise High Gain Balanced Amplifier Module
Manufacturer
Avago Technologies
Datasheet

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Absolute Maximum Rating
Product Consistency Distribution Charts
Note:
5. Distribution data sample size is 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may
6. Measurements are made on a production test board, which can show a variance of up to 1dB in gain and OIP3 compared to a soldered-
2
Symbol
Pin,max
Pdiss
Vdd
Vctrl
T
T
j
STG
150
120
have nominal values anywhere between the upper and lower limits.
down demo board. Input trace losses have been de-embedded from actual measurements.
180
150
120
90
60
30
90
60
30
0
0
Figure 1. NF@ 2.0GHz; 5V, Vctrl=2.2V
0.45
Process Capability for NF
Figure 3. OIP3@ 2.0GHz; 5V, Vctrl=2.2V
29
Process Capability for OIP3
Parameter
Device Supply Voltage
Control Voltage
CW RF Input Power
(Vdd = 5.0, Vctrl=2.2V)
Total Power Dissipation
Junction Temperature
Storage Temperature
Nominal = 0.57, USL = 1.0
0.5
31
LSL = 29.0, Nominal = 35.6
0.55
33
OIP3 (dBm)
[2]
NF (dB)
T
0.6
35
A
=25
[4]
o
0.65
C
37
Std dev=0.96
[5,6]
Std dev=0.03
Units
V
V
dBm
o
o
W
C
C
CPK=2.30
CPK=4.35
39
0.7
0.75
5.5
22
1.21
150
-65 to 150
Absolute Max.
3.0
41
500
400
300
200
100
400
300
200
100
0
Figure 2. Gain @ 2.0GHz; 5V, Vctrl=2.2V
0
Process Capability for Gain
28
Figure 4. Vctrl @ 2.0GHz; 5V, Vctrl=2.2V
Process Capability for Idd
75
LSL = 85.0, Nominal = 100.2, USL = 115.0
LSL = 28.5, Nominal = 29.9
85
29
(Vdd = 5.0V, Vctrl=2.2V)
Notes:
Thermal Resistance
2.
3.
4.
jc = 27
Operation of this device in
may cause permanent damage.
using Infra-Red Measurement
Board (module belly)
Derate 37mW/
excess of any of these limits
Thermal resistance measured
Technique.
temperature T
95
Gain (dB)
Idd (mA)
30
o
C/W
105
B
Std dev = 2.3
CPK_U = 2.1
CPK_L = 2.2
o
C for T
is 25
31
[3]
Std dev=0.2
115
CPK=2.5
o
C.
B
>123
o
32
125
C.

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