sigc15t60s Infineon Technologies Corporation, sigc15t60s Datasheet - Page 2

• Manufacturer Part Number: sigc15t60s
• Description: Igbt Chip
• Manufacturer: Infineon Technologies Corporation

MAXIMUM RATINGS:
Parameter
Collector-emitter voltage, T j =25 C
DC collector current, limited by T
Pulsed collector current, t
Gate emitter voltage
Operating junction and storage temperature
SC data, V
1 )
STATIC CHARACTERISTICS (tested on chip), T j =25 C, unless otherwise specified
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
ELECTRICAL CHARACTERISTICS (verified by design/characterization):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (verified by design/characterization), inductive load
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
2)
Edited by INFINEON Technologies AI PS DD CLS, L7551D, Edition 2, 26.01.2005
values also influenced by parasitic L- and C- in measurement and package.
depending on thermal properties of assembly
GE
= 15V, V
CC
= 360V, Tvj = 150°C
p
limited by T
jmax
jmax
V
V
V
I
I
R
C
C
C
t
t
t
t
Symbol
CES
GES
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
(BR)CES
CE(sat)
GE(th)
Gint
i s s
o s s
r s s
V
V
f =1MHz
T
V
I
V
R
C
I
V
C
j
C E
G E
C C
G E
G
V
= 1 7 5 C
V
= 30A ,
V
=430µA , V
CE
= 1 0 . 6
CE
GE
GE
= 2 5 V ,
= 0 V ,
= 0/ 1 5 V ,
= 40 0 V ,
=600V , V
Conditions
Conditions
Conditions
=0V , V
=0V , I
=15V, I
V
I
I
V
T
tp
C
c p u l s
j
C E
G E
, T
Symbol
s t g
C
GE
C
= 2mA
GE
=30A
GE
=20V
=V
=0V
CE
SIGC15T60S
min.
min.
min.
600
4.1
-40 ... +175
Value
600
90
1 )
Value
20
5
Value
Value
typ.
typ.
none
1630
typ.
108
292
1.5
4.9
50
24
26
90
2)
max.
max.
max.
2.05
300
5.7
1.6
Unit
°C
µs
Unit
pF
Unit
ns
V
A
A
V
Unit
µA
nA
V