hufa75631p3 Fairchild Semiconductor, hufa75631p3 Datasheet

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hufa75631p3

Manufacturer Part Number
hufa75631p3
Description
33a, 100v, 0.040 Ohm, N-channel, Ultrafet Power Mosfets
Manufacturer
Fairchild Semiconductor
Datasheet

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Manufacturer
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Price
Part Number:
HUFA75631P3
Manufacturer:
FSC
Quantity:
12 500
©2001 Fairchild Semiconductor Corporation
33A, 100V, 0.040 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
Symbol
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
NOTE:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
1. T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Continuous (T
Continuous (T
J
= 25
JEDEC TO-220AB
HUFA75631P3
o
C to 150
(FLANGE)
DRAIN
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
C
C
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SOURCE
= 25
= 100
o
C.
GS
G
o
DRAIN
C, V
o
C, V
GATE
= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
GS
D
S
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SOURCE
GATE
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
T
Data Sheet
C
JEDEC TO-263AB
= 25
HUFA75631S3ST
o
C, Unless Otherwise Specified
(FLANGE)
DRAIN
HUFA75631P3, HUFA75631S3ST
Features
• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
NOTE: When ordering, use the entire part number, e.g.,
HUFA75631S3ST.
HUFA75631P3
HUFA75631S3ST
- r
- Temperature Compensated PSPICE® and SABER™
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
PART NUMBER
Electrical Models
DS(ON)
December 2001
J
, T
DGR
DSS
STG
DM
pkg
GS
= 0.040
D
D
D
L
TO-220AB
TO-263AB
HUFA75631S3ST
Figures 6, 14, 15
HUFA75631P3
V
PACKAGE
GS
-55 to 175
Figure 4
0.80
100
100
120
300
260
33
23
20
10V
HUFA75631P3, HUFA75631S3ST Rev. B
75631P
75631S
BRAND
UNITS
W/
o
o
o
W
V
V
V
A
A
C
C
C
o
C

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hufa75631p3 Summary of contents

Page 1

... DGR , T J STG = 0.040 10V V GS PACKAGE BRAND TO-220AB 75631P TO-263AB 75631S HUFA75631P3 HUFA75631S3ST UNITS 100 100 Figure 4 DM Figures 6, 14, 15 120 D 0.80 W/ -55 to 175 300 L 260 pkg HUFA75631P3, HUFA75631S3ST Rev ...

Page 2

... MIN TYP 100 - - - 0.033 - - - - - - - 9 50V 1.0mA - 2 1220 - 295 - 100 MIN TYP - - - - - - - - HUFA75631P3, HUFA75631S3ST Rev. B MAX UNITS - 250 A 100 0.040 o 1.25 C C/W 100 145 2 MAX UNITS 1.25 V 1.00 V 112 ns 400 nC ...

Page 3

... CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUFA75631P3, HUFA75631S3ST Rev. B 175 ...

Page 4

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 1 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE HUFA75631P3, HUFA75631S3ST Rev +1] DSS 0 ...

Page 5

... FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 50V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC OSS DS GD 100 C RSS 20 0.1 1 DRAIN TO SOURCE VOLTAGE ( 33A 17A HUFA75631P3, HUFA75631S3ST Rev 0V 1MHz ISS 100 ...

Page 6

... FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. SWITCHING TIME WAVEFORM HUFA75631P3, HUFA75631S3ST Rev 20V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUFA75631P3, HUFA75631S3ST Rev. B DRAIN 2 SOURCE 3 ...

Page 8

... S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUFA75631P3, HUFA75631S3ST Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUFA75631P3, HUFA75631S3ST Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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